MRF175GV
The RF MOSFET Line 200/150W, 500MHz, 28V
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Product Specifications
- Part Number
- MRF175GV
- Description
- The RF MOSFET Line 200/150W, 500MHz, 28V
- Min Frequency(MHz)
- 5
- Max Frequency(MHz)
- 225
- Bias Voltage(V)
- 28.0
- Pout(W)
- 200.00
- Gain(dB)
- 14.00
- Efficiency(%)
- 65
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N–Channel Enhancement Mode MOSFET
- Low Crss — 20 pF typ @ VDS = 28 V
- Low Thermal Resistance
- 100% Ruggedness Test at Rate Output Power
- Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)