MSS25-145-B10D

Silicon Schottky P-Type Diodes: Low Barrier

MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.

Product Specifications

Part Number
MSS25-145-B10D
Description
Silicon Schottky P-Type Diodes: Low Barrier
Vf(V)
0.2200
Vb
1.00
Total Capacitance(pF)
0.100
Dynamic Resistance(ohms)
52.0
Package Category
Beamlead
Package
B10D

Features

  • Superior 1/f noise.
  • Passivated with silicon nitride.
  • Low barrier height.
  • Better temperature stability than zero bias Schottky diode.

Technical Resources

Datasheet


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MSS25-145-B10D
Schottky Diode,Beamlead, B10B
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