MSS30-046-P55

Low Barrier Silicon Schottky Diodes

MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.

Product Specifications

Part Number
MSS30-046-P55
Description
Low Barrier Silicon Schottky Diodes
Vf(V)
0.2900
Vb
2.00
Total Capacitance(pF)
0.230
Dynamic Resistance(ohms)
18.0
Package Category
Ceramic Package
Package
P55

Features

  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MSS30-046-P55
Schottky Diode,Chip-Package, P55-1
MSS30-046-P55 Distributors