射频功率晶体管 - 硅双极

射频功率晶体管 - Si

MACOM公司以分立器件、模块和单元的形式提供广泛的双极(Bipolar)射频功率晶体管产品,支持频率从DC到3.5 GHz。我们的高功率双极晶体管完美匹配民用航空、通讯、网络、雷达、工业、科研、以及医疗领域。我们的全镀金制造工艺确保了产品的高性能和长期可靠性。我们的双极晶体管旨在为用户严苛的应用提供可靠的解决方案。

搜索历史
最近浏览的产品
  • 未找到最新产品!

条件搜索

部件号 订货 Short Description Min Frequency (MHz) Max Frequency (MHz) Pout (W) Gain (dB) Efficiency (%) Pulse Width (µS) Duty Cycle (%) ROHS Package Model Data (Sparameters) ADS & SPICE Model Info Application Notes Benefits Bias Voltage (V) Brightcove Video Compatible Parts Content Data Sheet Package Outline Datasheet Device Firmware ESD EVM GUI Software EVM User Guides Features Lead Finish Lead-Free MSL Marking Outline Drawings Package Category Product Briefs Product Bulletins Product Image Qualification Reports Type
 
 
 
 
 
 
 
 
MAPR-001214-380M00 询问 Radar Pulsed Power Transistor 380 WATTS, 1.2-1.4 GHz, 150us Pulse, 10% DUTY
1200 1400 380 8.8 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
MAPR-001214-380M.pdf
NPN Silicon Microwave Power Transistors
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Interdigitated Geometry
RoHS Compliant
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Yes
Ceramic Flange Mount
MAGX-000912-125L00.png
Bipolar
MAPR-001090-350S00 采购 Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10µs Pulse, 1% Duty
1025 1150 350 9 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPR-001090-350S00.pdf
NPN Silicon Microwave Power Transistors
Gold Metallizsation System
Diffused emitter ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Confirguration
Hermetic Metal/cCeramic Package
Internal Input and Output Impedance Matching
RoHS Compliant
Yes
Ceramic Flange Mount
MAPR-001090-350S00_355E-01 Style 1 Ceramic.JPG
Bipolar
MAPR-001011-850S00 询问 Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10µs Pulse, 1% Duty
1025 1150 850 7.8 42 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPR-001011-850S00.pdf
NPN Silicon Microwave Power Transistors
Diffused Emitter ballasting resistors
High efficiency Inter-Digitized Geometry
Broadband Class C operation
Common Base Configuration
Hermetic Metal/ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
RoHS Compliant
Yes
Ceramic Flange Mount
MAGX-000912-125L00.jpg
Bipolar
MAPP-002729-300M00 询问 Radar Pulsed Power Pallet 300W, 2.7-2.9 GHz
2700 2900 300 8.3 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 MAPP-002729-300M00.pdf
Input and Output Matched to 50O
MTTF>1x106 hrs.@Tflange=45°C
Nickel/Gold Plated Copper Flange
NPN Silicon Power Transistor
Includes RC Bias Filter
36VCC, 44W Nominal Input RF Drive Level
350W, 46% Efficiency; Typical RF Performance
Yes
Ceramic Flange Mount
MAPP-002729-300M00.JPG
Pallet
MAPR-000912-500S00 采购 Avionics Pulsed Power Transistor 500W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 500 9 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPR-000912-500S00.pdf
NPN Silicon Microwave Power Transistor
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
RoHS compliant
Yes
Ceramic Flange Mount
MAGX-000912-125L00.jpg
Bipolar
MAPR-002729-170M00 采购 Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 170 9 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 MAPR-002729-170M00.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Yes
Ceramic Flange Mount
MAPR-002729-170M00.JPG
Bipolar
MAPRST0912-50 采购 Avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 50 9.1 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPRST0912-50.pdf
NPN Silicon Microwave Power Transistors
Gold Metallization System
Diffused Emitter Ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Out Impedance Matching
Yes
Ceramic Flange Mount
MAPRST0912-50.JPG
Bipolar
MAPRST0912-350 采购 Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 350 9.4 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPRST0912-350.pdf
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Yes
Ceramic Flange Mount
MAPRST0912-350.JPG
Bipolar
MAPRST1030-1KS 采购 Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10µs Pulse, 1% Duty
1030 1030 1000 8 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MAPRST1030-1KS.pdf
NPN Silicon Microwave Power Transistors
Diffused Emitter Ballasting Resistor
High efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
RoHS Compliant
Yes
Ceramic Flange Mount
MAPRST1030-1KS.JPG
Bipolar
MRF428 采购 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
2 30 150 13 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF428.pdf
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 DB, Efficiency = 45%
Intermodulation distortion @ 150 W (PEP): IMD = -30 db (max.)
100% Tested Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW
Yes
Ceramic Flange Mount
MRF428-CASE-211-07-STYLE-1.JPG
Bipolar
PH3134-30S 采购 Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty
3100 3400 30 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3134-30S.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3134-30S.JPG
Bipolar
PH3134-55L 采购 Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
3100 3400 55 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3134-55L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3134-55L.JPG
Bipolar
PH3134-20L 询问 Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
3100 3400 20 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3134-20L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3134-20L.JPG
Bipolar
PH1214-3L 询问 Radar Pulsed Power Transistor 3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
1200 1400 3 5.7 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
16.5 PH1214-3L.pdf
NPN Silicon Microwave Power Transistor
RoHS Compliant
Hermetic Metal/Ceramic Package
Gold Metallization System
Internal Input and Output Impedance Matching
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistors
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-3L.JPG
Bipolar
PH1214-300M 采购 Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 300 8.75 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH1214-300M.pdf
NPN Silicon Microwave Power Transistors
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Yes
Ceramic Flange Mount
PH1214-300M.JPG
Bipolar
PH1214-25L 询问 Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 300µs Pulse, 10% Duty
1200 1400 25 9.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-25L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-25L.JPG
Bipolar
MRF1004MB 采购 Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
960 1215 4 10 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
35 MRF1004MB.pdf
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 W Peak
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Minimum Gain = 10 dB
Internal Input Matching for Broadband Operation
Yes
Ceramic Flange Mount
MRF1004MB-CASE-332A-03-STYLE-1.JPG
Bipolar
MRF321 采购 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
150 400 10 12 50 No
Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF321.pdf
Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Computer–controlled wirebonding gives consistent input Impedance
Gold Metallization System for High Reliability
Yes
Ceramic Flange Mount
MRF-321-CASE-244-04-STYLE-1.JPG
Bipolar
2N6439 采购 The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
225 400 60 7.8 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 2N6439.pdf
Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz
Gold Metallization System for High Reliability Application
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Built–In Matching Network for Broadband Operation using Double Match Technique
Yes
Ceramic Flange Mount
2N6439 - Case 316 -.JPG
Bipolar
MRF421 采购 The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
1 30 100 10 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
12.5 MRF421.pdf
Specified 12.5 V, 30 MHz characteristics: Output Power= 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%
Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (min.)
100% Tested for Load Mismatch at all Phase Angelswith 30:1 VSWR
Yes
Flange Mount
MRF421-CASE-211-11-STYLE-1.JPG
Bipolar
MRF429 采购 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
2 60 150 13 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF429.pdf
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45%
Diffused emitter resistors for superior ruggedness
Intermodulation distortion @ 150 W (PEP): IMD = –32 dB (Max)
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW
Yes
Ceramic Flange Mount
MRF448-CASE-211-11-STYLE-1.JPG
Bipolar
PH1214-55EL 采购 Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty
1200 1400 55 6.6 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-55EL.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-55EL.JPG
Bipolar
MRF422 采购 The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
2 30 150 10 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF422.pdf
Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%, Minimum Gain = 10 dB
Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)
100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR
Yes
Flange Mount
MRF422-CASE-211-11-STYLE-1.JPG
Bipolar
MRF313 采购 The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
100 400 1 15 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
28 MRF313.pdf
Specified 28 V, 400 MHz Characteristics: Output Power = 1.0 W, Power Gain = 15 dB min.,Efficiency = 45% (Typ.)
Emitter Ballast and Low Current Destiny for Improved MTBF
Common Emitter for Improved Stability
Yes
Ceramic Flange Mount
MRF313 - Case 305-01 Style 2.JPG
Bipolar
MRF323 采购 The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
150 400 20 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF323.pdf
Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.
Gold Metallization System for High Reliability
100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR •
Computer Controlled Wirebonding Gives Consistent Input Impedance
Yes
Ceramic Flange Mount
MRF-323-CASE-244-04-STYLE-1.JPG
Bipolar
MRF327 采购 NPN, Power Transistor 80W, 100 to 500MHz, 28V
225 400 80 7.3 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF327.pdf
Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz
Characterized for 100 =8 500 MHz
Gold Metallization System for High Reliability applications
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Built–In Matching Network for Broadband Operation using Double Match Technique
Yes
Ceramic Flange Mount
MRF327-CASE-316-01-STYLE-1.JPG
Bipolar
MRF16006 采购 The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V
1600 1640 6 7.4 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF16006.pdf
Specified 28 V, 1.6 GHz Class C Characteristics;: Output Power = 6 W, Minimum Gain = 7.4 dB, @ 6 W, Minimum Efficiency = 40% @ 6 W
Gold Metalized,Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz
Yes
Ceramic Flange Mount
MRF16006 - Case 395C-01 Style 2.JPG
Bipolar
MRF455 采购 The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V
2 30 60 13 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
12.5 MRF455.pdf
Specified 12.5 V, 30 MHz Characteristics:
Efficiency = 55%
Minimum Gain = 13 dB
Output Power = 60 W
Yes
Flange Mount
MRF455 - Case 211-07 Style 1.JPG
Bipolar
MRF316 采购 The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V
30 200 80 10 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF316.pdf
Guaranteed performance at 150 MHz, 28 Vdc: Output Power = 80 W, Minimum Gain = 10 dB
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Built–in Matching Network for Broadband Operation
Gold Metallization System for High Reliability Applications
Yes
Flange Mount
MRF316 -Case 316.JPG
Bipolar
MRF426 采购 1 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
2 30 25 22 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF426.pdf
Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35%
Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max)
Class A and AB Characterization
100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR
BLX 13 Equivalent
Yes
Ceramic Flange Mount
MRF426-CASE-211-11-STYLE-1.JPG
Bipolar
MRF392 采购 NPN, Power Transistor 80W, 100 to 500MHz, 28V
100 400 125 10 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF392.pdf
Specified 28 V, 400 MHz characteristics: Output Power = 125 W, Typical Gain = 10 dB, Efficiency = 55% (Typ.)
Gold Metallization System for High Reliability
Push–Pull Configuration Reduces Even Numbered Harmonics
Built–Input Impedance Matching Networks for Broadband Operations
100% Tested for Load Mismatch
Yes
Flange Mount
MRF392-CASE-744A-01-STYLE-2.JPG
Bipolar
MRF10031 采购 Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V
960 1215 30 9 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 MRF10031.pdf
Guaranteed Performance@ 960-1215MHz, 36Vdc
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
Hermetically sealed, industry standard package
100%Tesdted for Load Mismatch all Phase Angles with 10:1 VSWR
Minimum Gain: 9.0dB min., 9.5dB typ.
Output Power: 30W peak
Internal Input Matching for Broadband Operation
Yes
Ceramic Flange Mount
MRF10031-CASE-332A-03-STYLE-2.JPG
Bipolar
MRF454 采购 The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V
2 30 80 12 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
12.5 MRF454.pdf
Specified 12.5 V, 30 MHz characteristics:
Efficiency = 50%
Minimum gain = 12 dB
Output power = 80 W
Yes
Ceramic Flange Mount
MRF454-CASE-211-11-STYLE-1.JPG
Bipolar
MRF10005 采购 Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V
960 1215 5 8.5 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF10005.pdf
Guaranteed Performance @1.215GHz, 28Vdc
Hermetically Sealed Industry Standard Package
100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
RF Performance Curves for 28 Vdc and 36 Vdc Operation
Minimum Gain = 8.5dB, 10.3dB (Typ.)
Output Power: 5.0W CW
Internal Input Matching for Broadband Operation
Gold Metallized, Emitter Ballasted for Long Life and Rresistance to Metal Migration
Silicon Nitride Passivated
Yes
Ceramic Flange Mount
MRF10005-CASE-336E-02-STYLE-1.JPG
Bipolar
MRF393 采购 NPN, Power Transistor 100W, 30 to 500MHz, 28V
100 500 100 9.5 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF393.pdf
Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)
Gold Metallization System for High Reliability
Push–Pull Configuration Reduces Even Numbered Harmonics
Built–In Input Impedance Matching Networks for Broad Operatons
100% Test for Load Mismatch
Yes
Ceramic Flange Mount
MRF393-CASE-744A-01-STYLE-2.JPG
Bipolar
MRF314 采购 The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V
30 200 30 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF314.pdf
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
Gold Metallization System for High Reliability Applications
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Yes
Ceramic Flange Mount
MRF314 - Case 211-07 Style 1.JPG
Bipolar
MRF317 采购 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V
30 200 100 9 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF317.pdf
Guaranteed Performance at 150 MHz, 28 Vdc: Output Power = 100 W, Minimum Gain = 9.0 dB
Gold Metallization System for High Reliability Applications
100% Test for Load at all Phase Angels with 30:1 VSWR
Built–in matching network for broadband operation
Guaranteed Performance in Broadband Test Fixture
Peak AM Amplifier Service
High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W
Yes
Ceramic Flange Mount
MRF317 -Case 316.JPG
Bipolar
MRF10120 采购 Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
960 1215 120 8 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 MRF10120.pdf
Guaranteed Performance @ 1.215 GHz, 36 Vdc
Silicon Nitride Passivated
Hermetically Sealer Industry Standard Package
100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR
Gain = 7.6 dB min., 8 .5 dB (typ.)
Output Power = 120 W Peak
Internal Input and Output Matching for Broadband Operation
Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration
Yes
Ceramic Flange Mount
MRF10120-CASE-355C-02-STYLE-1.JPG
Bipolar
MRF587 采购 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
100 500 13 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
15 MRF587.pdf
Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA
Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV
High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz
All Gold Metal System
Ion Implanted
High fT — 5.5 GHz
Nichrome Emitter Ballast Resistors
Yes
Ceramic Flange Mount
Bipolar
MRF141G 采购 RF Power MOSFET 300W, 175MHz, 28V
5 175 300 12 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF141G.pdf
Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance: 0.35°C/W
Yes
Ceramic Flange Mount
MRF141G - Case 375-04 Style 2.JPG
TMOS
MRF10150 采购 Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz
1025 1150 150 9.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF10150.pdf
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Recommended Driver for a Pair of MRF10500 Transistors
Characterized with 10 µs, 10% Duty Cycle Pulses
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Silicon Nitride Passivated
Hermetically Sealed Package
100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
Gain = 9.5 dB min, 10.0 dB (typ.)
Output Power = 150 W Peak
Internal Input and Output Matching
Yes
Ceramic Flange Mount
MRF10150-CASE-376B-02-STYLE-1.JPG
Bipolar
MRF448 采购 The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
2 30 250 12 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF448.pdf
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%
100% Test for Load Mismatch at all Phase Angels with 3:1 VSWR
Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)
Yes
Ceramic Flange Mount
MRF448 -CASE 211–11, STYLE 1.JPG
Bipolar
MRF10350 采购 Bipolar
1025 1150 350 8.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF10350.pdf
Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)
Silicon Nitride Passivated
Hermetically Sealed Package
100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR
Characterized Using Mode-S Pulse Format
Internal Input and Output Matching
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Yes
Flange Mount
MRF10350-CASE-355E-01-STYLE-1.JPG
Bipolar
MRF1090MB 采购 Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
960 1215 90 8.4 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF1090MB.pdf
Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR
Internal Input and Output Matching
Yes
Ceramic Flange Mount
MRF1090MB-CASE-332A-03-STYLE-1.JPG
Bipolar
MRF10502 采购 Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz
1025 1150 500 8.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF10502.pdf
Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)
Internal Input and Output Matching
Gold Metalized, Emitter, Ballested for Long Life and Metal Migration
Silicon Nitride Passivated
Hermetically Sealed Industry Packaging
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Characterized with 10µs, 1% Duty Cycle Pulses
Yes
Ceramic Flange Mount
MRF10502-CASE-355J-02-STYLE-1.JPG
Bipolar
MRF1150MB 采购 Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
960 1215 150 7.8 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF1150MB.pdf
Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB
Nitride Passivated
Industry Standard Package
100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR
Internal Input Matching for Broadband Operation
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Yes
Ceramic Flange Mount
MRF1150MB-CASE-332A-03-STYLE-1.JPG
Bipolar
MRF1000MB 采购 Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V
960 1215 0.7 10 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
18 MRF1000MB.pdf
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
Nitride Passivated
Industry Standard Package
100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR
Minimum Gain: 10dB
Output Power: 0.2W
Internal input matching for broadband operation
Yes
Ceramic Flange Mount
MRF1000MB-CASE-332A-03-STYLE-2.JPG
Bipolar
PH1090-700B 采购 Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32µs Pulse, 2% Duty
1030 1090 700 7.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 PH1090-700B.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Common Base Configuration
Broadband Class C Operation
Yes
Ceramic Flange Mount
PH1090-700B.jpg
Bipolar
PH1090-15L 采购 Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty
1030 1090 15 9 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
45 PH1090-15L.pdf
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Yes
Ceramic Flange Mount
PH1090-15L.JPG
Bipolar
PH2729-65M 采购 Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 65 8.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2729-65M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH2729-65M.jpg
Bipolar
PH1214-0.85L 采购 Radar Pulsed Power Transistor 0.85W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
1200 1400 0.85 9.3 30 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
11.5 PH1214-0.85L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-0.85L.JPG
Bipolar
PH1113-100 采购 Radar Pulsed Power Transistor 100W, 1.1-1.3 GHz, 3µs Pulse, 30% Duty
1100 1300 100 8 52 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
32 PH1113-100.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal input and output impedance matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1113-100.JPG
Bipolar
PH1214-12M 采购 Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 12 9 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-12M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-12M.JPG
Bipolar
PH3134-25M 采购 Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty
3100 3400 25 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3134-25M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3134-25M.JPG
Bipolar
PH3135-65M 采购 Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 65 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3135-65M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3135-65M.jpg
Bipolar
PH3134-10M 采购 Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M
3100 3400 10 8 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3134-10M.pdf
NPN Silicon Microwave Power Transistors
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Yes
Flange Mount
PH3134-10M.JPG
Bipolar
PH1214-25M 采购 Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 25 9.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-25M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-25M.JPG
Bipolar
PH3135-25S 采购 Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
3100 3500 25 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3135-25S.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3135-25S.JPG
Bipolar
PH2729-130M 采购 Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 130 7.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2729-130M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
MAGX-000912-125L00.png
Bipolar
PH1214-110M 采购 Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 110 7.4 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH1214-110M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-110M.JPG
Bipolar
PH1090-550S 采购 Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty
1030 1090 550 7.4 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 PH1090-550S.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1090-550S.jpg
Bipolar
PH1214-2M 采购 Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
1200 1400 2 7 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-2M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-2M.JPG
Bipolar
PH1617-2 采购 Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz
1600 1700 2 10 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
25 PH1617-2.pdf
Designed for Linear Amplifier Applications
Diffused Emitter Ballasting Resistor
Common Emitter Configuration
Class A: +44 dBm typ. 3rd Order Intercept Point
Class AB: -33 dBc typ. 3rd IMD at 2 W PEP
Internal Input Impedance Matching
Yes
Ceramic Flange Mount
PH1617-2.JPG
Bipolar
PH1214-100EL 采购 Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
1200 1400 100 6 52 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-100EL.pdf
NPN Silicon Microwave Power Transistors
Common Base Configuration
Broadband Class C Operation
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistors
Gold Metallization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
RoHS Compliant
Yes
Ceramic Flange Mount
PH1214-100EL.JPG
Bipolar
PH1214-80M 采购 Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 80 7.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH1214-80M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-80M.JPG
Bipolar
PH3135-5M 采购 Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 5 8.5 30 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
33 PH3135-5M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Common Base Configuration
Broadband Class C Operation
Yes
Ceramic Flange Mount
PH3135-5M.JPG
Bipolar
PH1214-6M 采购 Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
1200 1400 6 7 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 PH1214-6M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-6M.JPG
Bipolar
PH2226-50M 询问 Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
2200 2600 50 8 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2226-50M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH2226-50M.JPG
Bipolar
PH2729-8.5M 采购 Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 8.5 8.1 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2729-8.5M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
MACOM_general.png
Bipolar
PH3135-90S 采购 Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
3100 3500 90 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH3135-90S.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3135-90S.jpg
Bipolar
PH1090-175L 采购 Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty
1030 1090 175 8.3 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
45 PH1090-175L.pdf
NPN Silicon MicrowavePower Transistor
RoHS Compliant
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Yes
Flange Mount
PH1090-175L.JPG
Bipolar
PH2226-110M 采购 Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M
2200 2600 110 8 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2226-110M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Yes
Ceramic Flange Mount
PH2226-110M.jpg
Bipolar
PH2729-110M 采购 Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 110 6.8 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2729-110M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold metallization system
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH2729-110M.jpg
Bipolar
PH2729-25M 采购 Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 25 9.2 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2729-25M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Gold Metallization System
Internal Input and Output Impedance Matching
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Hermetic Metal/Ceramic Package
Yes
Flange Mount
PH2729-25M.JPG
Bipolar
PH2931-20M 采购 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty
2900 3100 20 8.2 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2931-20M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH2931-20M.JPG
Bipolar
PH2731-5M 采购 Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
2700 3100 5 7 30 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2731-5M.pdf
NPN Silicon Microwave Power Transistors
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Internal Input and Output Impedance Matching
RoHS Compliant
Hermetic Metal/Ceramic Package
Yes
Flange Mount
PH2731-5M.JPG
Bipolar
PH3134-65M 采购 Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M
3100 3400 65 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
RoHS Compliant
36 PH3134-65M.pdf
NPN Silicon Microwave Power Transistors
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3134-65M.JPG
Bipolar
PH2731-20M 采购 Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
2700 3100 20 8.2 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2731-20M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Flange Mount
PH2731-20M.JPG
Bipolar
PH3135-20M 采购 Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 20 7.5 35 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
RoHS Compliant
36 PH3135-20M.pdf
NPN Silicon Microwave Power Transistors
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistors
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH3135-20M.JPG
Bipolar
PH2731-75L 采购 Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty
2700 3100 75 7 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
36 PH2731-75L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH2731-75L.JPG
Bipolar
PH1090-75L 采购 Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty
1030 1090 75 9 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
45 PH1090-75L.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1090-75L.JPG
Bipolar
PH1214-220M 采购 Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 220 7.4 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH1214-220M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Gold Metallization System
InternalInput and Output Impedance Matching
Yes
Ceramic Flange Mount
PH1214-220M.jpg
Bipolar
PH1090-350L 采购 Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty
1030 1090 350 8 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
45 PH1090-350L.pdf
NPN Silicon Microwave Power Transistors
Common Base Configuration
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistor
High Efficiency Inter-Digitized Geometry
Broadband Class C operation
Yes
Ceramic Flange Mount
PH1090-350L.jpg
Bipolar
PH1214-40M 采购 Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 40 8.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH1214-40M.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
Diffused Emitter Ballasting Resistors
High Efficiency Inter-Digitized Geometry
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
PH1214-40M.JPG
Bipolar
PH2856-160 采购 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty
2856 2856 160 7.5 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
40 PH2856-160.pdf
NPN Silicon Microwave Power Transistors
RoHS Compliant
Hermetic Metal/Ceramic Package
Internal Input and Output Impedance Matching
Gold Metallization System
High Efficiency Inter-Digitized Geometry
Diffused Emitter Ballasting Resistor
Broadband Class C Operation
Common Base Configuration
Yes
Ceramic Flange Mount
GaN_MAGX-001220-100L00.jpg
Bipolar