开关 - SP3T

开关 - SP3T

MACOM公司提供各类开关产品,可覆盖多种商业以及航空航天与国防市场。我们的产品组合覆盖从DC到70 GHz的广泛频谱。我们的硅混合微波集成电路 (HMIC) PIN二极管工艺非常适合在50 MHz到26 GHz范围内工作的高功率宽带开关。我们的AlGaAs PIN二极管工艺可将开关裸片的频率范围上限扩展到70 GHz以上,非常适合仪表和雷达应用。我们的GaAs PHEMT和MESFET技术非常适合针对窄带和宽带应用优化的快速切换和低控制电压开关。我们的75欧姆吸收开关专为要求苛刻的CATV、FTTx和DBS基础设施和CPE应用而设计。

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releaseDate 部件号 订货 描述 最低频率(MHz) 最高频率(MHz) 插入损耗(dB) 插入损耗(dB) IIP3 (dBm) 连续波输入功率(dBm) 75欧姆 封装类别 封装 ROHS 无铅 硬件手册 模型数据(Sparameters) 应用笔记 配置 驱动器 特性 标志 引线精加工 产品照片 Brightcove视频 直流功率 VSWR Additional Resources
 
 
 
 
 
 
2014/03/31 MASW-011053 询问 HMIC Silicon PIN Diode SP3T Switch
2000 18000 0.8 50 48 No
Die/Bumped Die
DIE
Yes
MASW-011053.pdf
MASW_011053_S-Parameters.zip
MASW_011053_S2P.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
Broad Bandwidth Specified up to 18 GHz
Fully Monolithic
Low Insertion Loss / High Isolation
Integrated Bias Network
Usable up to 26 GHz
RoHS Compliant* and 260°C Reflow Compatible
Glass Encapsulate Construction
MASW-011053.jpg
2009/12/03 MASW-007074-000100 询问 GaAs SP3T Absorptive Switch with ASIC Driver, DC-3.0 GHz
0 3000 2 32 45 No
Plastic Surface Mount
SOW24
Yes
MASW-007074.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
Typical Isolation: 32 dB (2,000 MHz)
Typical Insertion Loss: 2.0 dB (2,000 MHz)
Integral ASIC TTL/CMOS Driver
Low DC Power Consumption
50 Ohm Nominal Impedance
Tape and Reel Packaging Available
Test Boards Available
Lead-Free SOW-24 Package
100% Matte Tin Plating over Copper
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
RoHS* Compliant Version of SW65-0214
MACOM_general.png
2005/11/11 MASWSS0200 采购 GaAs CDMA-GPS
500 2500 0.6 24 61 No
Plastic Surface Mount
3mm PQFN-12LD
Yes
MASWSS0200.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Balanced (symmetrical) RF Ports
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 3 mm 12-Lead PQFN Package
0.5 Micron GaAs pHEMT Process
High Isolation: 21 dB at 2 GHz
Low Insertion Loss: 0.55 dB at 1 GHz
Low Cross Modulation
RoHS* Compliant Version of MASWSS0060
78
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
3x3 pfqn 12 lead.jpg
2005/08/14 MASWSS0144 采购 GaAs CDMA-GPS
500 3000 0.6 24 55 No
Plastic Surface Mount
3mm PQFN-12LD
Yes
MASWSS0144.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
CDMA Handset Switching Applications
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 12-Lead STQFN with 0.4 mm lead pitch package
0.5 micron GaAs pHEMT Process
High Power: P0.1dB = 36 dBm @ 1 GHz
High Isolation: 27 dB @ 1 GHz
Low Insertion Loss: 0.55 dB @ 1 GHz
Low Cross Modulation
Balanced (symmetrical) RF Ports
2x2mm STQFN 12-lead.jpg
2005/02/11 MASWSS0199 采购 GaAs CDMA-GPS
0 2500 0.5 30 58 No
Plastic Surface Mount
3mm PQFN-12LD
Yes
MASWSS0199.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Unbalanced (asymmetric) RF Paths
RoHS* Compliant Version of MASWSS0065
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 3 mm 12-lead PQFN Package
0.5 micron GaAs pHEMT Process
High Isolation: 20 dB at 2.0 GHz
Low Insertion Loss: 0.5 dB at 1.0 GHz
Low Cross Modulation
3x3 pfqn 12 lead.jpg
2003/03/07 MA4AGSW3 采购 AlGaAs Reflective
50 50000 0.6 48 No
Die
DIE
Yes
Yes
MA4AGSW3.pdf
MA4AGSW3_SPAR.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP3T
Without
Ultra Broad Bandwidth : 50 MHz to 50 GHz
RoHS Compliant*
260°C Reflow Compatible
Polymer Scratch Protection
Silicon Nitride Passivation
M/ACOM’s unique AlGaAs Hetero-Jjunction Anode Technology
+10mA for Isolation state
-10mA for low loss state
Low Current consumption
31 dB Isolation at 50 GHz
0.8 dB Insertion Loss
Functional Bandwidth : 50 MHz to 70 GHz
MACOM_general.png
3203639713001
2000/10/09 MA4SW310B-1 采购 HMIC PIN Diode with Bias
2000 26000 1.2 47 40 No
Die/Bumped Die
DIE
Yes
MA4SW210B_310B.pdf
MA4SW310B-1_SPAR.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP3T
Without
Broad Bandwidth Specified 2 to 18 GHz
RoHS Compliant
Polymer Protective Coating
Glass Encapsulate
Fully Monolithic Construction
Integrated Bias Network
Usable up to 26 GHz
Low Insertion Loss / High Isolation
MACOM_general.png
2000/07/19 MA4SW310 采购 HMIC™ PIN Diode
50 26500 0.8 48 40 No
Die/Bumped Die
DIE
Yes
MA4SWx10Series.pdf
MA4SW310_spar.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP3T
Without
Broad Bandwidth
50 nS Switching Speed
Up to +30dBm C.W. Power Handling @ +25°C
Glass Encapsulated Chip with Polymer Protective Coating
Rugged Design Fully Monolithic
Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs
Usable from 50 MHz to 26.5 GHz
Specified from 50 MHz to 20 GHz
DIE MA4SW310.JPG
MASW-003100-1192 采购 HMIC™ PIN Diode
50 26500 0.3 65 40 No
Die/Bumped Die
DIE
Yes
Yes
MASW-00x100.pdf
MASW-003100_SPAR (2).zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Broad Bandwidth
RoHS Compliant
Up to +33dBm C.W. Power Handling
Glass Encapsulated Construction
Fully Monolithic
Rugged
Lower Insertion Loss / Higher Isolation than pHempt
Usable from 50MHz to 26.5GHz
Specified from 50MHz to 20GHz
MACOM_general.png
MASW-003103-1364 采购 HMIC™ Si PIN Diode
50 20000 0.8 40 40 No
Surface Mount Die
Surmount Die
Yes
Yes
MASW-003103-1364.pdf
MASW-003103-1364.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M541 - Bonding, Handling, and Mounting Procedures for Chip Diode Devices
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Specified from 50 MHz to 20 GHz
Polymer Scratch Protection
Silicon Nitride Passivation
Up to +38 dBm C.W. Power Handling1 @ +25°C
Glass Encapsulated Construction
Rugged, Fully Monolithic
RoHS Compliant Surmount™ Package
Low Parasitic Capacitance and Inductance
High Isolation
Low Insertion Loss
Usable up to 26 GHz
MACOM_general.png
4487668663001
MASW_003103_PCB_AND_FOOTPRINT.zip
MASW-003102-13590 采购 HMIC™ Si PIN Diode with Bias
2000 18000 0.8 50 40 No
Die/Bumped Die
DIE
Yes
Yes
MASW-00x102 Series.pdf
MASW-003102_SPAR.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Broad Bandwidth Specified up to 18 GHz
RoHS* Compliant
260°C Reflow Compatible
Glass Encapsulate Construction
Fully Monolithic
Low Insertion Loss / High Isolation
Integrated Bias Network
Usable up to 26 GHz
Rugged
MACOM_general.png
MASW-010612 询问 GaAs SP3T Switch
0 3500 0.6 21 54 No
Plastic Surface Mount
1.5mm PDFN-8LD
Yes
MASW-010612.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Low Insertion Loss: 0.6 dB
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 1.5 mm 8-Lead PDFN Package
1.8 V Operation with 1.8 V on Voltage Pull Up
Fast Settling Speed for timing-sensitive applications
0.5 micron GaAs pHEMT Process
High P1dB: 36 dBm
1.5 mm_8-lead PQFN.jpg
MASW-011030 采购 High Power SP3T 100W Reflective Switch
30 3000 0.2 50 62 No
Plastic Surface Mount
7 mm 16-lead HQFN Package
Yes
MASW-011030.pdf
MASW-011030_Spar_ext_bias_tees.zip
Power Handling: 100 W @ 85°C
Insertion Loss: 0.35 dB @ 2 GHz
Isolation: 40 dB @ 2 GHz
Surface Mount 7 mm 16-lead HQFN Package
Suitable for High Power Military and Civilian Radio Applications
RoHS* Compliant and 260°C Reflow Compatible
Class 1B HBM ESD Rating
Product Image - MASW-011030.jpg
4358709035001
MASW-011041 采购 Switch, SP3T 200 W
50 1000 0.3 51 No
9 mm 20-Lead HQFN
9 mm HQFN 20-lead Package
Yes
Yes
MASW-011041 (2).pdf
200 W CW Incident Power @ +85°C
Operates from +V DC Bias Only
Harmonics: <-70 dBc
High Isolation: >40 dB
Low Insertion Loss: <0.5 dB
Halogen-Free “Green” Mold Compound
Lead-Free 9 mm HQFN 20-lead Package
RoHS* Compliant and 260°C Reflow Compatible
5796223416001
MASW-008955 采购 GaAs
0 3000 0.5 22 54 No
Plastic Surface Mount
2mm PDFN-8LD
Yes
Yes
MASW-008955.pdf
MASW_008955_SParameters.zip
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Low Insertion Loss: 0.55 dB @ 2.45 GHz
1.8 V Operation with 1.8 V on Voltage Pull Up
Low gate lag for timing sensitive applications
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 8-Lead PDFN Package
0.5 micron GaAs pHEMT Process
High P1dB: 35 dBm @ 2.6 V
2mm 8-lead_new logo.jpg
MASW-008330 采购 GaAs SP3T 2.5 V Switch DC - 3.0 GHz
500 3000 0.3 24 50 No
Plastic Surface Mount
2mm PDFN-8LD
Yes
MASW-008330.pdf
MASW-008330_Spars_boardLoss_De-embedded.zip
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Low Voltage Operation: 2.5V
RoHS* Compliant version of MASWSS0028
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
100% Matte Tin Plating over Copper
Lead-Free 2 mm 8-Lead PDFN Package
0.5 micron GaAs PHEMT Process
Low Insertion Loss: 0.3 dB at 1 GHz
2mm 8-lead_new logo.jpg
MASW-009482 采购 GaAs
50 4000 0.7 23 65 No
Plastic Surface Mount
2mm STQFN-12LD
Yes
MASW-009482.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
CDMA Handset Switching Applications
RoHS* Compliant
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
Lead-Free 2 mm 12-Lead STQFN Package with 0.5 mm Lead Pitch
0.5 micron GaAs pHEMT Process
High Power: P0.1dB = 36 dBm @ 1 GHz
High Isolation: 27 dB @ 1 GHz
Low Insertion Loss: 0.55 dB @ 1 GHz
Low Cross Modulation
Balanced (symmetrical) RF Ports
30
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
2x2mm STQFN 12-lead.jpg
MASWSS0191 采购 GaAs
500 3000 0.7 30 58 No
Plastic Surface Mount
2mm STDFN-8LD
Yes
MASWSS0191.pdf
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP3T
Without
Optimized RF Paths
100% Matte Tin Plating over Copper
Lead-Free 2 mm 8-lead STDFN Package
0.5 micron GaAs pHEMT Process
High Isolation: 21.5 dB at 1.9 GHz (PCS)
Low Insertion Loss: 0.7 dB at 820 MHz (Cell)
Low Cross Modulation
260°C Reflow Compatible
Halogen-Free “Green” Mold Compound
RoHS* Compliant
2x2mm_8-lead.jpg
MSW3101-310 询问 Surface Mount SP3T Switches
400 4000 0.5 43 50 No
Plastic Surface Mount
8 mm L x 8 mm W x 2.5 mm H
Yes
MSW310x-310.pdf
Symmetrical SP3T
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W C
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
High RF peak power: 500 W
High IIP3: 65 dBm
Low Insertion loss: 0.45 dB
RoHS compliant
Operates from positive voltage: +5 V & +28 V to +125 V
SP3T.PNG
+V Only
1.4:1
MSW3100-310 询问 Surface Mount SP3T Switches
50 1000 0.3 57 50 No
Plastic Surface Mount
8 mm L x 8 mm W x 2.5 mm H
Yes
MSW310x-310.pdf
Symmetrical SP3T
Wide frequency range: 50 MHz to 4 GHz, in 2 bands
Higher average power handling than plastic packaged MMIC switches: 158 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.45 dB
High RF peak power: 500 W
High IIP3: 65 dBm
Operates from positive voltage: +5 V & +28 V to +125 V
RoHS Compliant
SP3T.PNG
+V Only
1.2:1
MSW3103-310 询问 Surface Mount SP3T Switches
50 1000 0.4 34 64 50 No
Plastic Surface Mount
8 mm L x 8 mm W x 2.5 mm H
Yes
MSW3103_3104-310.pdf
Symmetrical SP3T
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W
Higher average power handling than plastic packaged MMIC switches: 100 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.5 dB
High IIP3: 65 dBm
Operates from positive voltage: +5 V & -28 V to -125 V
RoHS compliant
SP3T.PNG
+V & -V
1.5:1
MSW3200-320 询问 Surface Mount PIN Diode SP3T Switches
20 1000 0.4 47 65 50 No
Plastic Surface Mount
8mm L x 8mm W x 2.5 mm H
Yes
MSW320x-320.pdf
Symmetrical SP3T
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W)
Higher Average Power Handling than Plastic (100 W C.W.)
Faster Switching Speed (1 µS)
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm)
Operates From +5 V & -180 V for Higher Linearity
RoHS Compliant
SP3T.PNG
+V & -V
1.2:1
MSW3201-320 询问 Surface Mount PIN Diode SP3T Switches
400 4000 0.6 35 65 50 No
Plastic Surface Mount
8mm L x 8mm W x 2.5 mm H
Yes
MSW320x-320.pdf
Symmetrical SP3T
Surface Mount SP3T Switch in Compact Outline: 8mm L x 8mm W x 2.5 mm H
Lower Insertion Loss (0.5 dB) & Higher IIP3 (65 dBm)
Higher Voltage > 1,000 Volts for Higher RF Peak Power (500 W)
Higher Average Power Handling than Plastic (100 W C.W.)
Faster Switching Speed (1 µS)
Operates From +5 V & -180 V for Higher Linearity
RoHS Compliant
SP3T.PNG
+V & -V
1.4:1
MSW3104-310 询问 Surface Mount SP3T Switches
400 3000 0.6 34 64 50 No
Plastic Surface Mount
8 mm L x 8 mm W x 2.5 mm H
Yes
MSW3103_3104-310.pdf
Symmetrical SP3T
Wide frequency range: 50 MHz to 3 GHz, in 2 bands
High RF peak power: 500 W
Higher average power handling than plastic packaged MMIC switches: 100 W CW
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Low Insertion loss: 0.5 dB
Operates from positive voltage: +5 V & -28 V to -125 V
High IIP3: 65 dBm
RoHS compliant
SP3T.PNG
+V & -V
1.5:1
2017/04/03 MASW-011029 采购 Wideband, 75 - 100 GHz, AlGaAs SP3T PIN Diode Switch with integrated bias circuits
75000 100000 1.3 33 No
Die
Die
Yes
Yes
MASW-011029.pdf
MACOM Gen.png
5386108331001
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