开关 - SP5T

开关 - SP5T

MACOM公司提供各类开关产品,可覆盖多种商业以及航空航天与国防市场。我们的产品组合覆盖从DC到70 GHz的广泛频谱。我们的硅混合微波集成电路 (HMIC) PIN二极管工艺非常适合在50 MHz到26 GHz范围内工作的高功率宽带开关。我们的AlGaAs PIN二极管工艺可将开关裸片的频率范围上限扩展到70 GHz以上,非常适合仪表和雷达应用。我们的GaAs PHEMT和MESFET技术非常适合针对窄带和宽带应用优化的快速切换和低控制电压开关。我们的75欧姆吸收开关专为要求苛刻的CATV、FTTx和DBS基础设施和CPE应用而设计。

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部件号 订货 描述 最低频率(MHz) 最高频率(MHz) 插入损耗(dB) 插入损耗(dB) IIP3 (dBm) IP1dB (dBm) 75欧姆 ADS & SPICE模型信息 应用笔记 优势 Brightcove视频 兼容部件 配置 目录 数据手册封装概述 硬件手册 设备固件 驱动器 ESD EVM GUI软件 EVM用户手册 特性 引线精加工 无铅 MSL 标志 模型数据(Sparameters) 外形图 封装 封装类别 产品介绍 产品公告 产品照片 质量报告 ROHS
 
 
 
 
 
 
MA4AGSW5 采购 AlGaAs Reflective
50 50000 1.1 47 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
3203639713001
SP5T
MA4AGSW5_rev5.pdf
Without
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Polymer Scratch protection
Silicon Nitride Passivation
MACOM's Unique AlGaAs Hetero-Junction Anode Technology
+10mA for Isolation state
-10mA for low loss state
Low Current Consumption.
35 dB Isolation at 50 GHz
1.7dB Insertion Loss at 50 GHZ
Functional Bandwidth : 50 MHz to 70 GHz
RoHS* Compatible
260°C Reflow Compatible
Yes
MA4AGSW5_SPAR.ZIP
DIE
Die
MACOM_general.png
MA4SW510 采购 HMIC™ PIN Diode
50 26500 0.9 38 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
MA4SW510.pdf
Without
Broad Bandwidth
50 nS Switching Speed
Rugged Fully Monolithic
Lower Insertion Loss and Higher Isolation than Comparable pHEMT/ Discrete Component Designs
Usable from 50 MHz to 26.5 GHz
Specified from 50 MHz to 20 GHz
Up to +30dBm C.W. Power Handling @ +25°C
Glass Encapsulated Chip with Polymer Protective Coating
Yes
MA4SW510_SPAR.zip
DIE
Die/Bumped Die
MACOM_general.png
MA4SW510B-1 采购 Reflective PIN Diode
2000 18000 1.1 41 40 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
MA4SW510B-1.pdf
Without
Broad Bandwidth Specified up to 18 GHz
Fully Monolithic
Rugged, Glass Encapsulated Construction
Integrated Bias Network
Usable up to 26 GHz
Low Insertion Loss / High Isolation
Yes
MA4SW510B-1_SPAR.zip
DIE
Die/Bumped Die
MACOM_general.png
MASW-010351 询问 SP5T High Isolation Terminated Switch
10 4000 1.4 57 50 No
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
MASW-010351.pdf
Without
Isolation: 51 dB @ 2.1 GHz
RoHS* Compliant
260°C Reflow Compatible
Lead-Free 4 mm 24-Lead PQFN package
50 O Terminated Outputs (Off-State)
6 States: 5 ON paths and All-Off State
Low Gate Lag for timing sensitive applications
Integral CMOS 3:5 Decoder, Only 3 Control Pins
Input IP3: 50 dBm Typical @ 2.1 GHz
nsertion Loss: 1.0 dB @ 2.1 GHz
100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
Yes
S044
4mm PQFN-24LD
Plastic Surface Mount
4x4_24-lead PQFN.jpg
MASW-005100-1194 询问 HMIC SP5T Silicon PIN Diode Switch
50 26500 0.7 50 No
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
MASW-005100-1194.pdf
Without
Ultra Broad Bandwidth: 50MHz to 26GHz
+33dBm Power Handling
Reliable, Fully Monolithic, Glass Encapsulated Construction
50nS Switching Speed
0.9 Insertion Loss: 38dB Isolation at 20GHz
RoHS Compliant
Yes
DIE
Die/Bumped Die
MACOM_general.png