Switches - SP8T

Switches - SP8T

At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications. 

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releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Insertion Loss (dB) Isolation (dB) IIP3 (dBm) IP1dB (dBm) 75 Ohm Package Category Package ROHS Lead-Free Datasheet Model Data (Sparameters) Application Notes Configuration Driver Features Marking Lead Finish Product Image Brightcove Video CW Incident Power (W)
 
 
 
 
 
 
 
2003/07/25 MA4AGSW8-1 Buy AlGaAs PIN Diode
50 50000 1.5 37 40 No
Die
DIE
Yes
Yes
MA4AGSW8-1.pdf
MA4AGSW8_s2p.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP8T
Without
Ultra Broad Bandwidth: 50 MHz to 40 GHz

Polymer Scratch protection

Silicon Nitride Passivation

MACOM’s unique AlGaAs hetero-junction anode technology

Low Current consumption: •-10mA for low loss state •+10mA for Isolation state

Functional Bandwidth : 50 MHz to 50 GHz

AGPS8TA
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