CG2H30070

70 W; 0.5 - 3.0 GHz; GaN HEMT

The CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.

Product Specifications

Part Number
CG2H30070
Description
70 W; 0.5 - 3.0 GHz; GaN HEMT
Min Frequency(MHz)
500
Max Frequency(MHz)
3000
Peak Output Power(W)
80
Gain(dB)
15.0
Efficiency(%)
55
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 85 W POUT typical at 28 V
  • 10 dB Power Gain
  • 58% Drain Efficiency
  • Internally Matched

Technical Resources

Datasheet


Order from MACOM

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