CG2H40025

25 W RF Power GaN HEMT

The CG2H40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down; flange package and solder-down pill packages.

Product Specifications

Part Number
CG2H40025
Description
25 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
25
Efficiency(%)
62
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • 17 dB Small Signal Gain at 2.0 GHz
  • 15 dB Small Signal Gain at 4.0 GHz
  • 30 W typical PSAT
  • 70% Efficiency at PSAT
  • 28 V Operation

Order from MACOM

CG2H40025F
25W, 4.0GHz, GaN HEMT G28V4 (CG2H40025F)
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AMPLIFIER ASSY, 4.0 GHz, INCLUDES CG2H40
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CG2H40025P
25W, 4.0GHz, GaN HEMT G28V4 (CG2H40025P)
CG2H40025P Distributors