CG2H40035

35 W RF Power GaN HEMT

The CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.

Product Specifications

Part Number
CG2H40035
Description
35 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
35
Gain(dB)
14.0
Efficiency(%)
64
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • 40 W typical PSAT
  • 64% Efficiency at PSAT
  • 14 dB Small Signal Gain at 3.5 GHz
  • 28 V Operation

Order from MACOM

CG2H40035F
GaN HEMT, G28V4, 35W, DC-6.0GHz, FLANGE
CG2H40035F Distributors
CG2H40035F-AMP
AMPLIFIER ASSY, DC-6.0GHz, INCLUDES CG2H
CG2H40035F-AMP Distributors
CG2H40035F-AMP1
AMPLIFIER ASSY, INCLUDES CG2H40035F
CG2H40035P
GaN HEMT, G28V4, 35W, DC-6.0GHz, PILL
CG2H40035P Distributors