CGH27015P
15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
The CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.
Product Specifications
- Part Number
- CGH27015P
- Description
- 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 15
- Gain(dB)
- 14.5
- Efficiency(%)
- 28
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
- Technology
- GaN-on-SiC
Features
- VHF – 3.0 GHz Operation
- 15 W Peak Power Capability
- 14.5 dB Small Signal Gain
- 2 W PAVE < 2.0% EVM
- 28% Efficiency at 2 W Average Power