CGH27060F
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
Note: CGH27060F is Not Recommended for New Designs. Refer to CG2H40045F. The CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27060F ideal for VHF; Comms; 3G; 4G; LTE; 2.3 - 2.9 GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH27060F
- Description
- 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Peak Output Power(W)
- 60
- Gain(dB)
- 14.0
- Efficiency(%)
- 27
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- VHF – 3.0 GHz Operation
- 14 dB Small Signal Gain
- 8.0 W PAVE at < 2.0% EVM
- 27% Drain Efficiency at 8 W Average Power