CGH31240F
240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems
The CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH31240F ideal for 2.7 –3.1-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH31240F
- Description
- 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3100
- Peak Output Power(W)
- 240
- Gain(dB)
- 12.0
- Efficiency(%)
- 60
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 2.7 – 3.1 GHz Operation
- 12 dB Power Gain
- 60% Power Added Efficiency
- < 0.2 dB Pulsed Amplitude Droop