CGH35015

15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX

The CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35015 ideal for 3.3 - 3.9-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Product Specifications

Part Number
CGH35015
Description
15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
15
Gain(dB)
12.0
Efficiency(%)
26
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Pill
Technology
GaN-on-SiC

Features

  • 3.3 – 3.9 GHz Operation
  • 15 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 2.0 W PAVE at 2.0% EVM
  • 26% Efficiency at 2 W Average Power

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGH35015P
15W, 3.3-3.9GHz, 830102P, GaN HEMT, PILL
CGH35015P Distributors