CGH40010

10 W RF Power GaN HEMT

The CGH40010 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down; flange and solder-down pill packages.

Product Specifications

Part Number
CGH40010
Description
10 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
10
Gain(dB)
14.0
Efficiency(%)
65
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • Up to 6 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 14 dB Small Signal Gain at 4.0 GHz
  • 13 W typical PSAT
  • 65 % Efficiency at PSAT
  • 28 V Operation

Order from MACOM

CGH40010F
10W, 4.0GHz, 830120F, GaN HEMT, FLANGE
CGH40010F Distributors
CGH40010F-AMP
AMPLIFIER ASSY, 4.0GHz, INCLUDED CGH4001
CGH40010F-AMP Distributors
CGH40010P
10W, 4.0GHz, 830120P, GaN HEMT, PILL
CGH40010P Distributors