CGH40035
35 W RF Power GaN HEMT
The CGH40035F is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities; making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down flange package. Note: CGH40035F is Not Recommended for New Designs. Refer to CCG2H40035F.
Product Specifications
- Part Number
- CGH40035
- Description
- 35 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 35
- Gain(dB)
- 13.0
- Efficiency(%)
- 60
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- Up to 4 GHz Operation
- 15 dB Small Signal Gain at 2.0 GHz
- 13 dB Small Signal Gain at 4.0 GHz
- 45 W typical PSAT
- 60 % Efficiency at PSAT
- 28 V Operation