CGH40045

45 W RF Power GaN HEMT

Note: CGH40045F/P are Not Recommended for New Designs. Refer to CG2H40045F/P. The CGH40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

Product Specifications

Part Number
CGH40045
Description
45 W RF Power GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Peak Output Power(W)
45
Gain(dB)
12.0
Efficiency(%)
55
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • Up to 4 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 12 dB Small Signal Gain at 4.0 GHz
  • 55 W Typical PSAT
  • 55% Efficiency at PSAT
  • 28 V Operation

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGH40045F
45W, 4.0GHz, 830121F, GaN HEMT, FLANGE,
CGH40045F Distributors
CGH40045F-AMP
AMPLIFIER ASSY, 4.0GHz, INCLUDES CGH4004
CGH40045F-AMP Distributors
CGH40045P
45W, 4.0GHz, 830121P, GaN HEMT, PILL
CGH40045P Distributors