CGHV1F006
6 W; DC - 15.0 GHz; 40 V; GaN HEMT
The CGHV1F006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006 operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40 V to as low as 20-V VDD; maintaining high gain and efficiency.
Product Specifications
- Part Number
- CGHV1F006
- Description
- 6 W; DC - 15.0 GHz; 40 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 15000
- Peak Output Power(W)
- 6
- Gain(dB)
- 7.0
- Efficiency(%)
- 52
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
- Technology
- GaN-on-SiC
Features
- Up to 15 GHz Operation
- 8 W Typical Output Power
- 17 dB Gain at 6.0 GHz
- 15 dB Gain at 9.0 GHz
- Application circuits for 5.8 – 7.2 GHz; 7.9 – 8.4 GHz; and 8.5 – 9.6 GHz.
- High degree of APD and DPD correction can be applied