CGHV1F025
25 W; DC - 15 GHz; 40 V; GaN HEMT
The CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.
Product Specifications
- Part Number
- CGHV1F025
- Description
- 25 W; DC - 15 GHz; 40 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 15000
- Peak Output Power(W)
- 25
- Gain(dB)
- 11.0
- Efficiency(%)
- 51
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
- Technology
- GaN-on-SiC
Features
- Up to 15 GHz Operation
- 25 W Typical Output Power
- 11 dB Gain at 9.4 GHz
- Up to 15 GHz Operation