CGHV37400F

400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems

The CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on The high power density 50 V;  0.4 µm GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.

Product Specifications

Part Number
CGHV37400F
Description
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
Min Frequency(MHz)
3300
Max Frequency(MHz)
3700
Peak Output Power(W)
550
Gain(dB)
14.0
Efficiency(%)
55
Operating Voltage(V)
48
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 3.3 – 3.8 GHz Operation
  • 525 W Typical Output Power
  • 11.5 dB Power Gain
  • 55% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop

Technical Resources

Datasheet


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CGHV37400F
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems