CMPA2060035

35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

Product Specifications

Part Number
CMPA2060035
Description
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
Min Frequency(MHz)
2000
Max Frequency(MHz)
6000
Peak Output Power(W)
35
Gain(dB)
30.0
Efficiency(%)
35
Operating Voltage(V)
28
Form
Packaged MMIC
Package Category
Flange, Die
Technology
GaN-on-SiC

Features

  • 35 W Typical PSAT
  • Operation up to 32 V
  • High Breakdown Voltage
  • High Temperature Operation

Order from MACOM

CMPA2060035D
MMIC, DIE, GaN, 40W, 2.0 - 6.0GHz, 28V,
CMPA2060035D Distributors
CMPA2060035F
Amplifier,MMIC,GaN,40W,2.0-6.0GHz,28V
CMPA2060035F Distributors
CMPA2060035F-AMP
AMPLIFIER ASSY, 2.0 - 6.0GHz
CMPA2060035F-AMP Distributors
CMPA2060035F1
Amplifier,MMIC,GaN,40W,2.0-6.0GHz,28V
CMPA2060035F1 Distributors
CMPA2060035F1-AMP
AMPLIFIER ASSY, 2.0 - 6.0GHz
CMPA2060035F1-AMP Distributors