CMPA2738060

80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier

The CMPA2738060 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.

Product Specifications

Part Number
CMPA2738060
Description
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier
Min Frequency(MHz)
2700
Max Frequency(MHz)
3800
Peak Output Power(W)
80
Gain(dB)
34.0
Efficiency(%)
54
Operating Voltage(V)
50
Form
Packaged MMIC
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 34 dB Small Signal Gain
  • 85 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation

Technical Resources

Datasheet


Order from MACOM

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