GTRA214602FC
High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
The GTRA214602FC is a 490-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA214602FC
- Description
- High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
- Min Frequency (MHz)
- 2110
- Max Frequency(MHz)
- 2170
- P3dB Output Power(W)
- 490
- Gain(dB)
- 14.4
- Efficiency(%)
- 59
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Input matched
- Asymmetric Doherty design: Main: P3dB = 170 W Typ
- Peak: P3dB = 350 W Typ
- Typical pulsed CW performance: 16 μs pulse width, 10% duty cycle, 2140 MHz, 48 V; Doherty fixture: Gain = 15 dB @ 49 dBm
- Efficiency = 59% @ 49 dBm
- Output power at P3dB = 490 W