GTRA263902FC-V2
High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
The GTRA263902FC is a 370-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA263902FC-V2
- Description
- High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
- Min Frequency (MHz)
- 2495
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 370
- Gain(dB)
- 13.8
- Efficiency(%)
- 54
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical pulsed CW performance: 2690 MHz; 48 V; combined outputs
- Output power at P3dB 370 W
- Efficiency 70%
- Gain 15 dB
- Capable of handling 10:1 VSWR @48 V; 56 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS compliant
- Input matched