GTRA362802FC-V1
High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
The GTRA362802FC is a 280-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA362802FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
- Min Frequency (MHz)
- 3300
- Max Frequency(MHz)
- 3900
- P3dB Output Power(W)
- 280
- Gain(dB)
- 13.5
- Efficiency(%)
- 46
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetrical Doherty design: Main P3dB 120 W Typ, Peak P3dB 180 W Typ
- Typical Pulsed CW performance; 3400-3600 MHz, 48 V, combined outputs
- Output power at P3dB 280 W
- Efficiency 60%
- Gain 15 dB
- Capable of handling 10:1 VSWR @48 V, 44 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS compliant
- Input matched