MA4E2054L-1261

Low Barrier

The MA4E2054L-1261 diode is a low barrier, n-type, silicon Schottky device. It is useful as a high performance mixer or detector diode at frequencies from VHF through X-band. These chips can be used in automatic assembly processes due to their 0.004” gold bond pads and sturdy construction.

Product Specifications

Part Number
MA4E2054L-1261
Description
Low Barrier
Vf(V)
0.3000
Vb
3.00
Total Capacitance(pF)
0.150
Dynamic Resistance(ohms)
17.0
Junction Capacitance(pF)
0.150
Package Category
Die/Bumped Die
Package
ODS-1261

Features

  • Low IR (<100nA @ 1V, <500nA @ 3V)
  • RoHS* Compliant
  • Low 1/F Noise
  • Low Capacitance: 0.14 pF (typ.)
  • High Detector Sensitivity: -55 dBm TSS
  • Low Noise Figure: 5.7 dB (SSB) at X-Band
  • Designed for High Volume, Low Cost Detector and Mixer Applications

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MA4E2054L-1261
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