MADP-042908-130600

Surmount PIN Diode

This device is a silicon, glass PIN diode surmount chip fabricated with MACOM’s patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for moderate incident power applications, = 10W/C.W. or where the peak power is = 52W, pulse width is = 1µS, and duty cycle is = 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant, make these devices a superior choice for higher frequency switch elements when compared to their plastic package counterparts.

Product Specifications

Part Number
MADP-042908-130600
Description
Surmount PIN Diode
Breakdown Voltage, Minimum(V)
100
Resistance(Ohm)
3.10
Total Capacitance(pF)
0.060
Lifetime(nS)
230
CW Power Dissipation(W)
0.8
Thermal Resistance(°C/W)
185.0
Package
ODS-1306 Die
Package Category
Surface Mount Die
Min Frequency(MHz)
50
Max Frequency(MHz)
16000

Features

  • Surface Mount
  • RoHS Compliant
  • High Average and Peak Power Handling
  • Low Parasitic Capacitance and Inductance
  • Polymer Scratch Protection
  • Silicon Nitride Passivation
  • Rugged Silicon-Glass Construction
  • No Wire Bonding Required

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

MADP-042908-130600
Diode,HMIC,Surmount,PIN,8um