MRF1004MB

Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz

Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

Product Specifications

Part Number
MRF1004MB
Description
Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
Min Frequency(MHz)
960
Max Frequency(MHz)
1215
Bias Voltage(V)
35.0
Pout(W)
4.00
Gain(dB)
10.00
Efficiency(%)
40
Type
Bipolar
Package
Flange Ceramic Pkg
Package Category
Ceramic Flange Mount

Features

  • Guaranteed Performance @ 1090 MHz, 35 Vdc
  • Output Power = 4.0 W Peak
  • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
  • Nitride Passivated
  • Industry Standard Package
  • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
  • Minimum Gain = 10 dB
  • Internal Input Matching for Broadband Operation

Order from MACOM

MRF1004MB
Transistor,960-1215MHz,35V,9pk
MRF1004MB Distributors