MRF171A
The RF MOSFET Line 45W, 150MHz, 28V
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.
Product Specifications
- Part Number
- MRF171A
- Description
- The RF MOSFET Line 45W, 150MHz, 28V
- Min Frequency(MHz)
- 100
- Max Frequency(MHz)
- 200
- Bias Voltage(V)
- 28.0
- Pout(W)
- 45.00
- Gain(dB)
- 17.00
- Efficiency(%)
- 60
- Type
- TMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Flange Mount
Features
- N–Channel Enhancement Mode MOSFET
- Excellent Thermal Stability Suited for Cass A Operation
- Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)
- Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment:
- Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)
- Gold Top Metal
- Low Crss – 8 pF @ VDS = 28 V
- 100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
- Facilitates Manual Gain Controll, ALC and Modulation Techniques
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)