产品详细信息

Silicon Schottky N-Type Diodes: High Barrier
MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.
特性
  • VF, RD and CJ matching options.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices.
规范
  • Total Capacitance: 0.43 pF
  • Dynamic Resistance: 15 ohms
Package
  • H20Â
Package Category
  • Ceramic Package
Part Number Package MACOM Richardson RFPD DigiKey Mouser rell
MSS50-155-H20
Silicon Schottky N-Type Diodes: High Barrier
H20Â 询问

兼容部件

Log in to MyMACOM to save your favorite parts.

最近浏览过的

  • 未找到最新产品!

技术资源

Resources

搜索历史

X

继续使用本网站,即表示您同意根据我们的 Cookie政策 使用cookie