Product Detail

Extra High Barrier Silicon Schottky Diodes
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Features
  • VF, RD and CJ Matching Options
  • Chip, Beam Lead and Packaged Devices
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available
Specifications
  • Dynamic Resistance: 25 ohms
  • Vf: 625 V
  • Vb: 3.5 
  • Junction Capacitance: 0.08 pF
  • RS: 20 Typ
Package
  • B20
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MSS60-244-B20
Extra High Barrier Silicon Schottky Diodes
B20 Inquire

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