WS1A2639-V1-R3K

38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum; average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Product Specifications

Part Number
WS1A2639-V1-R3K
Description
38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
Min Frequency (MHz)
2496
Max Frequency(MHz)
2690
P3dB Output Power(W)
50
Gain(dB)
16.5
Efficiency(%)
57
Operating Voltage(V)
48
Package Category
Surface Mount
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • GaN-on-SiC technology
  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01

Technical Resources

Datasheet


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WS1A2639-V1-R3K
8W avg 48V 2496-2690 MHz GaN SiC Integra
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