WSGPA01-V1-R3K
10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.
Product Specifications
- Part Number
- WSGPA01-V1-R3K
- Description
- 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
- Min Frequency (MHz)
- 0
- Max Frequency(MHz)
- 5000
- P3dB Output Power(W)
- 10
- Gain(dB)
- 18.0
- Efficiency(%)
- 19
- Operating Voltage(V)
- 48
- Package Category
- Surface Mount
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- GaN on SiC HEMT technology
- Operating frequency : up to 5 GHz
- P3dB : up to 10 W
- Supply voltage : up to 50 V
- Pb-free and RoHS compliant