产品详细信息

XB1005-BD
Buffer Amplifier
MACOM’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.
特性
  • High Dynamic Range
  • RoHS* Compliant
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • Wafer RF, DC and Noise Figure Testing
  • +16 dBm P1dB Compression at Power Bias ? 100% On
  • 2.7 dB Noise Figure at Low Noise Bias
  • 23.0 dB Small Signal Gain
  • Low Noise or Power Bias Configurations
  • Excellent LO Driver/Buffer Amplifier
  • 260°C Reflow Compatible
Applications
  • Aerospace and Defense
  • ISM
  • Wireless Networking and Communication
规范
  • NF: 2.7 dB
  • Bias Voltage: 4 V
  • Output P1dB: 16 dBm
  • Gain: 23 dB
  • OIP3: 26 dBm
  • Bias Current: 50 mA
  • Min Frequency: 35,000 MHz
  • Max Frequency: 45,000 MHz
Package
  • DIE
Package Category
  • Die/Bumped Die
Part Number Package MACOM Richardson RFPD DigiKey Mouser rell
XB1005-BD-EV1
EVAL MOD, XB1005-BD, K-TYPE
DIE 询问

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