GaN和GaAs器件偏置保护模块

偏置上电顺序控制模块

MABC-001000-DP000L偏置控制模块利用耗尽型半导体技术为碳化硅基氮化镓(GaN on SiC)、硅基氮化镓(GaN on Si)、砷化镓(GaAs)射频功率晶体管或模块提供准确的栅极电压和脉冲漏极电压。

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部件号 订货 描述 Positive Supply Voltage Positive Supply Current (mA) Negative Supply Voltage Negative Supply Current (mA) Output Gate Voltage Output Gate Current Pulse Enable TTL Voltage Peak Output Gate IGC (mA) Open Drain ON/OFF 硬件手册 封装 特性 ROHS 无铅 模型数据(Sparameters) 应用笔记 Type 封装类别 引线精加工 兼容部件 产品照片 Package Size 外形图 Brightcove视频 ADS & SPICE模型信息
 
 
 
 
MABC-001000-DP000L 采购 GaN Bias Controller/Sequencer Module
50 14 -6.0
-3 -8.0 to 0V
50 mA
3.3
50 100 / 70
MABC-001000-DP000L.pdf
SMT
Robust GaN Protection at Any Power Up/Power Down Sequence
RoHS* Compliant and 260°C Reflow Compatible
Gate Bias Output Current = 50 mA for Heavy RF Compression
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Internal Thermistor or External Temperature Sensor Voltage for Gate Bias Sum
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate Bias Voltage with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
Yes
GaN Bias Controller/Sequencer Module
Surfact Mount
Package Image - MABC-001000-DP00L.PNG
22.5 x 6.5 x 5.0
MABC-001000-DPS00L 采购 GaN Bias Controller/Sequencer Module
50 14 -6
-3 -8 to 0
50
3.3
MABC-001000-DPS00L.pdf
6.60 x 22.48 mm2
Robust GaN Protection at Any Power Up/Power Down Sequence
Gate Bias Output Current = 50 mA for Heavy RF Compression
Low Power Dissipation < 100 mW
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
RoHS* Compliant and 260°C Reflow Compatible
Yes
Module
SMT
MABC-001000-DPS00L.PNG