RF Power Amplifier - GaN-on-Si - CW

RF Power Transistors - GaN on Si  -  CW

MACOM is the world’s only provider of GaN-on-Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN-on-Si RF power amplifier products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear products are ideal for civil avionics, communications, networks, long pulsed radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using GaN-on-Si technology to meet our customers’ most demanding needs. Our GaN-on-Silicon products, offered as discrete transistors and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency,  and ruggedness over wide operating bandwidths.

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releaseDate Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Test Freq (GHz) Efficiency Package Duty Cycle (%) Theta J-C (C/W) Model Data (Sparameters) Datasheet Max Frequency (MHz) Package Category ROHS Lead-Free Min Frequency (MHz) Application Notes Features Lead Finish Compatible Parts Product Image Brightcove Video ADS & SPICE Model Info
 
 
 
 
 
 
 
 
NPT2021 Buy GaN on Silicon General Purpose Amplifier, DC - 2.5 GHz, 48 V, 45 W
DC - 2.5 GHz
48 45 17 2.5 >55
TO272
1.9 NPT2021_48V_175mA_preliminary.s2p
NPT2021_48V_Vg=-3p0V_preliminary.s2p
NPT2021_48V_350mA_preliminary.s2p
NPT2021_48V_525mA_preliminary.s2p
NPT2021.pdf
2500 Plastic
Yes
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Amplifier
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
16.5 dB Gain at 2.5 GHz
48 V Operation
Tunable from DC - 2.5 GHz
Suitable for linear and saturated applications
PPT2022_TO272_small.jpg
NPTB00004A Buy Gallium Nitride 28V, 5W, DC-6 GHz HEMT
DC - 6
28 5 17 2.5 >50
SOIC8NE
15 NPTB00004A_28V_50mA.S2P
NPTB00004A_28V_75mA.S2P
NPTB00004A_28V_250mA.S2P
NPTB00004A_28V_Vg-3V.S2P
NPTB00004A_28V_100mA.S2P
NPTB00004A.pdf
6000 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Broadband Operation from DC-6 GHz
Drop in Replacement for NPTB00004
High Drain Efficiency (>55%)
Industry Standard Plastic Package
28V Operation
NP00004A_SOIC-8NE_new_logo.jpg
2014/12/04 NPT2022 Buy GaN on Silicon General Purpose Amplifier, DC - 2 GHz, 48 V, 100 W
DC - 2.0
48 100 20 0.9 >60
TO272
1.3 NPT2022_48V 300mA.s2p
NPT2022_48V Vgs-3.s2p
NPT2022_48V 900mA.s2p
NPT2022_48V 600mA.s2p
NPT2022.pdf
2000 Plastic
Yes
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Amplifier
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
48 V Operation
Tunable from DC - 2 GHz
Suitable for linear and saturated applications
RoHS* Compliant and 260°C reflow compatible
TO-272 Package
PPT2022_TO272_small.jpg
NPT1012B Buy Gallium Nitride 28V, 25W General Purpose RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
4 NDS-025 Rev 3 NPT1012.pdf
4000 Ceramic
Yes
Yes
0 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Optimized for Broadband Operation from DC-4000MHz
High Efficiency from 14 - 28V
10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency
16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency
25W P3dB CW Power at 3000MHz
4.0 °C/W RTH with Maximum TJ Rating of 200 °C
Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
Subject to EAR99 Export Control
AC200B-new_logo.jpg
NPA1003QA Buy GaN on Silicon Power Amplifier, 20 - 1500 MHz, 28 V, 5 W
.02 - 1.5
28 5 18 1 >50
4mm PQFN-16LD
12 NPA1003_28V_50mA.S2P
NPA1003_28V_100mA.S2P
NPA1003_28V_m3V.S2P
NPA1003QA.pdf
15000 Plastic Surface Mount
Yes
Yes
20 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier
Suitable for Linear & Saturated Applications
Broadband Operation from 20 - 1500 MHz
16 dB Gain @ 1 GHz
28V Operation
42% PAE @ 1 GHz
100% RF Tested
50 Ω Input / Output Matched
Lead-Free 4 mm 16-lead QFN plastic Package
RoHS* Compliant and 260°C Reflow Compatible
4x4 mm-16 lead PQFN.jpg
NPT2020 Inquire GaN on Silicon General Purpose Amplifier, DC - 3.5 GHz, 48 V, 50 W
DC - 3.5 GHz
48 50 17 2.1 >60
Flange Ceramic Pkg
2.3 NPT2020_48V_175mA.s2p
NPT2020_48V_Vgs=-3V.s2p
NPT2020_48V_350mA.s2p
NPT2020_48V_525mA.s2p
NPT2020.pdf
Ceramic
Yes
Yes
AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Suitable for Linear and Saturated Applications
GaN on Si HEMT Depletion Mode Amplifier
55% Drain Efficiency @ 3.5 GHz
RoHS* Compliant and 260°C Reflow Compatible
48V Operation
Tunable from DC - 3.5 GHz
100% RF Tested
Standard Package with Bolt Down Flange
13.5 dB Gain @ 3.5 GHz
AC360B-new_logo_small.jpg
NPT1015B Inquire Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
DC - 3.5
28 45 14 2.5 >55
Flange Ceramic Pkg
2.1 NPT1015_28V_200mA.s2p
NPT1015_28V_600mA.s2p
NPT1015_28V_400mA.s2p
NPT1015_28V_Vgs=-3V.s2p
NPT1015B.pdf
Ceramic
Yes
AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Suitable for Linear and Saturated Applications
Rugged Design Passes 15:1 VSWR test
High Drain Efficiency (>55%)
Industry Standard Package
28V Operation
Tunable from DC-3.5 GHz
Reliable with MTTF > 106 at TJ = 200°C
AC360B-new_logo_small.jpg
NPT1010B Buy Gallium Nitride 28V, 100W General Purpose RF Power Transistor
DC - 2
28 100 20 0.9 >57
Flange Ceramic Pkg
1.4 NDS-023 Rev 3 NPT1010.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC – 2000MHz
100W P3dB CW Power at 900MHz
60-95 W PSAT CW Power from 500-1000MHz in broadband application design
High efficiency from 14 - 28V
1.4 °C/W RTH with Maximum TJ Rating of 200°C
Robust up to 10:1 VSWR Mismatch at all Phase Angles with No Damage to the Device
Subject to EAR99 Export Control
AC360B-new_logo_small.jpg
NPT25100B Buy Gallium Nitride 28V, 125W General Purpose RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Yes
AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
High Reliability Gold Metallization Process
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
90W P3dB CW Power
125W P3dB Peak Envelope Power
Lead-Free
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780B-new_logo_small.jpg
NPTB00025B Buy Gallium Nitride 28V, 25W General Purpose RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
4000 Ceramic
Yes
0 Optimized for Broadband Operation from DC - 4000MHz
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W P3dB CW Broadband Power from 500-1000MHz
25W P3dB CW Narrowband Power
Subject to EAR99 Export Control
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NPT2010 Buy GaN on Silicon General Purpose Amplifier, DC - 2.2 GHz, 48 V, 100 W
DC - 2.2 GHz
48 100 17 2.1 >60
Flange Ceramic Pkg
1.7 NPT2010_48V_300mA.s2p
NPT2010_48V_600mA.s2p
NPT2010_48V_Vgs=-3V.s2p
NPT2010_48V_900mA.s2p
NPT2010.pdf
2200 Ceramic
Yes
Yes
AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Suitable for Linear and Saturated Applications
High Drain Efficiency (>60%)
GaN on Si HEMT D-Mode Amplifier
48V Operation
Tunable from DC-2.2 GHz
15 dB Gain @ 2.15 GHz
61% Drain Efficiency @ 2.15 GHz
100% RF Tested
Industry Standard Metal-Ceramic Package
RoHS* Compliant
AC360B-new_logo_small.jpg
NPA1007 Buy GaN on Silicon Power Amplifier, 20 - 2500 MHz, 28 V, 10 W
.03-2.5
28 10 10 2 >50
6x5mm 8-lead PDFN
2000 NPA1007.pdf
2500 6x5mm 8-lead PDFN
Yes
Yes
20 GaN on Si HEMT D-Mode Amplifier
100% RF Tested
43% Drain Efficiency @ 2500 MHz
12.5 dB Gain @ 2500 MHz
28 V Operation
Broadband operation from 20 - 2500 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 6 x 5 mm 8-lead PDFN Package
Fully Matched at Input, Unmatched at Output
RoHS* Compliant
NPA1007.png
NPT25100P Inquire Gallium Nitride 28V, 125W General Purpose RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
10W linear power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
High Reliability Gold Metallization Process
Lead-Free
125W P3dB Peak Envelope Power
90W P3dB CW Power
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780P-small_new_logo.jpg
NPTB00025AB Inquire Gallium Nitride 28V, 25W General Purpose RF Power Transistor
DC - 4
28 25 13 3 >60
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC - 4000MHz
10W P3dB CW Broadband Power from 500-1000MHz
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
Subject to EAR99 Export Control
25W P3dB CW Narrowband Power
Lead-Free
RoHS compliant
AC200B-new_logo.jpg
MAGx-011086 Inquire GaN on Silicon General Purpose Amplifier, DC - 6 GHz, 28 V, 4 W
DC - 6.0
28 4 9 5.8 >50
4mm PQFN-24LD
17 MAGX-011086.pdf
6000 Plastic
Yes
Yes
0 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier
Suitable for Linear & Saturated Applications
28V Operation
Tunable from DC - 6 GHz
9 dB Gain @ 5.8 GHz
45% Drain Efficiency @ 5.8 GHz
100% RF Tested
Thermally-Enhanced 4 mm 24-Lead QFN
RoHS* Compliant
4x4_24-lead PQFN.jpg
NPA1008 Buy GaN on Silicon Power Amplifier, 20 - 2700 MHz, 28 V, 5 W
20 - 2700 MHz
28 5 12 1.9 >45
4x4mm 24-lead PQFN
1900 NPA1008.pdf
2700 PQFN
Yes
Yes
20 GaN on Si HEMT D-Mode Integrated Amplifier
100% RF Tested
45% Drain Efficiency
28 V Operation
50 Ω Input Matched
Broadband Operation from 20 - 2700 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 4 x 4 mm 24-lead PQFN Package
RoHS* Compliant
NPA1008.PNG
NPA1006 Buy GaN on Silicon General Purpose Amplifier, 20 - 1000 MHz, 28 V, 12.5 W
20-1000 MHZ
28 12.5 14 0.9 >45
6x5mm 8-lead PDFN Package
900 NPA1006.pdf
1000 PDFN Plastic Package
Yes
20 GaN on Si HEMT D-Mode Amplifier
Lead-Free 6 x 5 mm 8-lead PDFN Package
100% RF Tested
65% Drain Efficiency @ 900 MHz
14 dB Gain @ 900 MHz
28 V Operation
50 Ω Input Matched, Output Unmatched
Broadband operation from 20 - 1000 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
RoHS* Compliant
NPA1006.PNG
2018/12/18 MAMG-100227-010C0L Buy 10 W 2-Stage Hybrid GaN Module
.225-2.6
28 10 22 2.6 40
MD1
MAMG-100227-010C0L.pdf
Yes
Yes
Compact Size (14 x 18 mm2)
GaN-on-Si Technology
CW Output Power >10 W, 40% PAE and 22 dB Power Gain
Lead-Free Package with Heat Sink
RoHS* Compliant
MAMG-100227-010_both sides_shadow_6-inches.png
5979178384001
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