GaN和GaAs器件偏置保护模块

偏置上电顺序控制模块

MABC-001000-DP000L偏置控制模块利用耗尽型半导体技术为碳化硅基氮化镓(GaN on SiC)、硅基氮化镓(GaN on Si)、砷化镓(GaAs)射频功率晶体管或模块提供准确的栅极电压和脉冲漏极电压。

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部件号 订货 描述 正电源电压 正电源电流(mA) 负电源电压 负电源电流(mA) 输出栅极电压 输出栅极电流 脉冲使能TTL电压 峰值输出栅极IGC (mA) 漏极开路ON/OFF 硬件手册 封装 特性 ROHS 无铅 模型数据(Sparameters) 应用笔记 类型 封装类别 引线精加工 兼容部件 产品照片 封装大小 外形图 Brightcove视频 ADS & SPICE模型信息
 
 
 
 
MABC-001000-DP000L 采购 GaN Bias Controller/Sequencer Module
50 14 -6.0
-3 -8.0 to 0V
50 mA
3.3
50 100 / 70
MABC-001000-DP000L.pdf
SMT
Robust GaN Protection at Any Power Up/Power Down Sequence
RoHS* Compliant and 260°C Reflow Compatible
Gate Bias Output Current = 50 mA for Heavy RF Compression
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Internal Thermistor or External Temperature Sensor Voltage for Gate Bias Sum
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate Bias Voltage with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
Yes
GaN Bias Controller/Sequencer Module
Surfact Mount
Package Image - MABC-001000-DP00L.PNG
22.5 x 6.5 x 5.0
MABC-001000-DPS00L 采购 GaN Bias Controller/Sequencer Module
50 14 -6
-3 -8 to 0
50
3.3
MABC-001000-DPS00L.pdf
6.60 x 22.48 mm2
Robust GaN Protection at Any Power Up/Power Down Sequence
Gate Bias Output Current = 50 mA for Heavy RF Compression
Low Power Dissipation < 100 mW
Target = 500 ns Total Switch Transition Time
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT Leads
30 dB Typical EMI/RFI Rejection at All I/O Ports
Open Drain Output Current of = 200 mA for External MOSFET Switch Drive
Fixed Gate with Pulsed Drain Bias Voltage. Add-On Module Allows for Gate Pulsing
RoHS* Compliant and 260°C Reflow Compatible
Yes
Module
SMT
MABC-001000-DPS00L.PNG