射频功率晶体管 - 硅基氮化镓 (GaN on Si) - 连续波 (CW)

射频功率晶体管 - 硅基氮化镓 (GaN on Si) - 连续波 (CW)

MACOM公司是全球唯一在射频领域采用硅基氮化镓(GaN on Si)技术的供应商。我们采用硅基氮化镓(GaN on Si)技术以分立器件和模块的形式提供广泛的连续波(CW)射频功率晶体管产品,支持频率从DC到6GHz。我们的搞功率连续波和线性晶体管完美匹配民用航空、通讯、网络、长脉冲雷达、工业、科研、以及医疗领域。我们的产品线借助于MACOM六十多年的技术传承,运用硅基氮化镓(GaN on Si)技术,提供标准和定制化的解决方案以满足客户最严苛的需求。我们的硅基氮化镓产品(可用作分立晶体管和集成放大器)采用0.5微米HEMT工艺,宽带应用下,在功率、增益、增益平稳度、效率、健壮性方面展现出了卓越的射频性能。

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部件号 订货 描述 频率范围(GHz) 电源电压(V) PSAT (W) 增益(dB) 测试频率(GHz) 效率 封装 占空比(%) θJ-C (C/W) 模型数据(Sparameters) 硬件手册 最高频率(MHz) 封装类别 ROHS 无铅 最低频率(MHz) 应用笔记 特性 引线精加工 兼容部件 产品照片 Brightcove视频 ADS & SPICE模型信息
 
 
 
 
 
 
 
 
NPT2021 采购 GaN Wideband Transistor 48 V, 45 W
DC - 2.5
48 45 17 2.5 >55
TO272
1.9 NPT2021_48V_175mA_preliminary.s2p
NPT2021_48V_Vg=-3p0V_preliminary.s2p
NPT2021_48V_350mA_preliminary.s2p
NPT2021_48V_525mA_preliminary.s2p
NPT2021.pdf
2500 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Transistor
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
16.5 dB Gain at 2.5 GHz
48 V Operation
Tunable from DC - 2.5 GHz
Suitable for linear and saturated applications
PPT2022_TO272_small.jpg
NPTB00004D 采购 Gallium Nitride 28V, 5W RF Power Transistor
DC - 6
28 5 17 2.5 >55
SOIC8NE
23 NDS-002 Rev 7 NPTB00004.pdf
Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE, and Other Applications from DC to 6GHz
RoHS Compliant
High Reliability Gold Metallization Process
Low Cost, Surface Mount SOIC Package
15.5dB Power Gain
5W P3dB CW Power
100% RF Tested at 2500MHz
Subject to EAR99 Export Control
Lead-Free
NP00004A_SOIC-8NE_new_logo.jpg
NPTB00004A 采购 Gallium Nitride 28V, 5W, DC-6 GHz HEMT
DC - 6
28 5 17 2.5 >50
SOIC8NE
15 NPTB00004A_28V_50mA.S2P
NPTB00004A_28V_75mA.S2P
NPTB00004A_28V_250mA.S2P
NPTB00004A_28V_Vg-3V.S2P
NPTB00004A_28V_100mA.S2P
NPTB00004A.pdf
6000 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Broadband Operation from DC-6 GHz
Drop in Replacement for NPTB00004
High Drain Efficiency (>55%)
Industry Standard Plastic Package
28V Operation
NP00004A_SOIC-8NE_new_logo.jpg
NPT2022 采购 GaN Wideband Transistor 48 V, 100 W
DC - 2.0
48 100 20 0.9 >60
TO272
1.3 NPT2022_48V 300mA.s2p
NPT2022_48V Vgs-3.s2p
NPT2022_48V 900mA.s2p
NPT2022_48V 600mA.s2p
NPT2022.pdf
2000 Plastic
Yes
0 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Transistor
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
48 V Operation
Tunable from DC - 2 GHz
Suitable for linear and saturated applications
RoHS* Compliant and 260°C reflow compatible
PPT2022_TO272_small.jpg
NPT1012B 采购 Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
4 NDS-025 Rev 3 NPT1012.pdf
4000 Ceramic
Yes
0 Optimized for Broadband Operation from DC-4000MHz
High Efficiency from 14 - 28V
10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency
16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency
25W P3dB CW Power at 3000MHz
4.0 °C/W RTH with Maximum TJ Rating of 200 °C
Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
Subject to EAR99 Export Control
AC200B-new_logo.jpg
NPA1003QA 采购 Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
.02 - 1.5
28 5 18 1 >50
4mm PQFN-16LD
12 NPA1003_28V_50mA.S2P
NPA1003_28V_100mA.S2P
NPA1003_28V_m3V.S2P
NPA1003QA.pdf
Plastic Surface Mount
Yes
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Broadband Operation from 20-1500 MHz
High Drain Efficiency (>50%)
Industry Standard QFN Plastic Package
Input and Output Matched to 50 Ohms
28V Operation
4x4 mm-16 lead PQFN.jpg
NPT2018 采购 Gallium Nitride 48V, 12.5W, DC-3.5 GHz HEMT
DC - 3.5
48 12.5 17.5 2.5 >50
6x3mm PDFN-14LD
6.5 NPT2018.pdf
3500 Plastic
Yes
0 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Suitable for Linear and Saturated Applications
Industry Standard Plastic Package
48V Operation
Tunable from DC-6 GHz
High Drain Efficiency (>60%)
NPT2018_DFN3x6-14_new_logo.jpg
NPT2020 采购 Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
DC - 3.5
48 50 17 2.1 >60
Flange Ceramic Pkg
2.3 NPT2020_48V_175mA.s2p
NPT2020_48V_Vgs=-3V.s2p
NPT2020_48V_350mA.s2p
NPT2020_48V_525mA.s2p
NPT2020.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
High Drain Efficiency (>60%)
Industry Standard Package
48V Operation
Tunable from DC-3.5 GHz
AC360B-new_logo_small.jpg
NPT1015B 询问 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
DC - 3.5
28 45 14 2.5 >55
Flange Ceramic Pkg
2.1 NPT1015_28V_200mA.s2p
NPT1015_28V_600mA.s2p
NPT1015_28V_400mA.s2p
NPT1015_28V_Vgs=-3V.s2p
NPT1015B.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
Rugged Design Passes 15:1 VSWR test
High Drain Efficiency (>55%)
Industry Standard Package
28V Operation
Tunable from DC-3.5 GHz
Reliable with MTTF > 106 at TJ = 200°C
AC360B-new_logo_small.jpg
NPT1010B 采购 Gallium Nitride 28V, 100W RF Power Transistor
DC - 2
28 100 20 0.9 >57
Flange Ceramic Pkg
1.4 NDS-023 Rev 3 NPT1010.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC – 2000MHz
100W P3dB CW Power at 900MHz
60-95 W PSAT CW Power from 500-1000MHz in broadband application design
High efficiency from 14 - 28V
1.4 °C/W RTH with Maximum TJ Rating of 200°C
Robust up to 10:1 VSWR Mismatch at all Phase Angles with No Damage to the Device
Subject to EAR99 Export Control
AC360B-new_logo_small.jpg
NPT25100B 采购 Gallium Nitride 28V, 125W RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
High Reliability Gold Metallization Process
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
90W P3dB CW Power
125W P3dB Peak Envelope Power
Lead-Free
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780B-new_logo_small.jpg
NPTB00025B 采购 Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >50
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
4000 Ceramic
Yes
0 Optimized for Broadband Operation from DC - 4000MHz
Thermally Enhanced Industry Standard Package
100% RF Tested
Characterized for Operation up to 32V
10W P3dB CW Broadband Power from 500-1000MHz
25W P3dB CW Narrowband Power
Subject to EAR99 Export Control
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NPT2010 采购 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
DC - 2.2
48 100 17 2.1 >60
Flange Ceramic Pkg
1.7 NPT2010_48V_300mA.s2p
NPT2010_48V_600mA.s2p
NPT2010_48V_Vgs=-3V.s2p
NPT2010_48V_900mA.s2p
NPT2010.pdf
Ceramic
Yes
Suitable for Linear and Saturated Applications
High Drain Efficiency (>60%)
Industry Standard Package
48V Operation
Tunable from DC-2.2 GHz
AC360B-new_logo_small.jpg
NPA1007 询问 GaN Wideband Power Amplifier, 28 V, 10 W
.03-2.5
28 10 10 2 >50
6x5mm 8-lead PDFN
2000 询问 2500 6x5mm 8-lead PDFN
Yes
30 GaN on Si HEMT D-Mode Amplifier
100% RF Tested
42% PAE @ 2500 MHz
13.5 dB Gain @ 2500 MHz
28 V Operation
Broadband operation from 20-2500 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 6 x 5 mm 8-lead PDFN Package
50 O Input Matched, Output Unmatched
RoHS* Compliant and 260°C Reflow Compatible
NPA1007.png
NPT25100P 询问 Gallium Nitride 28V, 125W RF Power Transistor
DC - 2.7
28 90 16 2.5 >55
Flange Ceramic Pkg
1.8 NDS-001 Rev 6 NPT25100.pdf
Ceramic
Yes
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz
10W linear power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
High Reliability Gold Metallization Process
Lead-Free
125W P3dB Peak Envelope Power
90W P3dB CW Power
Subject to ECCN 3A982.a.1 Export Control
RoHS Compliant
AC780P-small_new_logo.jpg
NPTB00025AB 询问 Gallium Nitride 28V, 25W RF Power Transistor
DC - 4
28 25 13 3 >60
Flange Ceramic Pkg
5.3 NDS-006 Rev 4 NPTB00025.pdf
Ceramic
Yes
Optimized for Broadband Operation from DC - 4000MHz
10W P3dB CW Broadband Power from 500-1000MHz
Characterized for Operation up to 32V
100% RF Tested
Thermally Enhanced Industry Standard Package
Subject to EAR99 Export Control
25W P3dB CW Narrowband Power
Lead-Free
RoHS compliant
AC200B-new_logo.jpg
MAGx-011086 采购 GaN Wideband Transistor 28 V, 5 W DC - 6 GHz
DC - 6.0
28 4 9 5.8 >50
4mm PQFN-24LD
17 MAGX-011086.pdf
6000 Plastic
Yes
0 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Broadband operation from DC-6 GHz
Industry Standard Plastic Package
28V Operation
High Drain Efficiency (>60%)
4x4_24-lead PQFN.jpg
NPA1008 采购 GaN Wideband Power Amplifier, 28 V, 5 W
.02-2.7
28 5 12 1.9 >45
4x4mm 24-lead PQFN
1900 NPA1008.pdf
2700 QFN Plastic Package
Yes
20 GaN on Si HEMT D-Mode Integrated Amplifier
100% RF Tested
45% Drain Efficiency
28 V Operation
50 O Input Matched
Wideband tuned from 20 - 2700 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
Lead-Free 4 x 4 mm 24-lead PQFN Package
RoHS* Compliant and 260°C Reflow Compatible
NPA1008.PNG
NPA1006 询问 GaN Wideband Power Amplifier, 28 V, 12.5 W
.02-1
28 12.5 14 0.9 >45
6x5mm 8-lead PDFN Package
900 NPA1006.pdf
1000 PDFN Plastic Package
Yes
20 GaN on Si HEMT D-Mode Amplifier
Lead-Free 6 x 5 mm 8-lead PDFN Package
100% RF Tested
65% Drain Efficiency @ 900 MHz
14 dB Gain @ 900 MHz
28 V Operation
50 O Input Matched, Output Unmatched
Broadband operation from 20 - 1000 MHz
Suitable for linear and saturated applications
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
NPA1006.PNG
NPT2024 询问 GaN Wideband Transistor 50 V, 200 W
20 MHz to 3.0 GHz
50 200 20 0.9 65
TO272
询问 2700 TO272
Yes
0 GaN on Si HEMT D-Mode Transistor
100 % RF Tested
68 % Drain Efficiency @ 900 MHz
22 dB Gain @ 900 MHz
50 V Operation
Tunable from DC - 2.7 GHz
Suitable for linear and saturated applications
RoHS* Compliant and 260°C reflow compatible
Standard plastic package with bolt down flange
TO272.jpg
MATR-GSHC03-160150 询问 GaN Wideband Transistor Die
DC-3.5
28 45 12 2.5 Die
MATR-GSHC03-160150.pdf
Die
GaN on Si HEMT D-Mode Transistor Die
54% Drain Efficiency @ 2.5 GHz
12 dB Gain @ 2.5 GHz
28 V Operation
Broadband Operation DC - 3.5 GHz
Suitable for linear and saturated applications
Active Area Periphery: 16 mm
100% DC Tested
RoHS* Compliant
Chip Dimensions: 0.60 mm x 4.49 mm x 0.1 mm
Export Classification: EAR99
MACOM Gen.png
MAGe-102425-300 询问 300 W MACOM GaN Power Transistor
50 300 16 2.45 70
TO-272S-4
询问 2500 Plastic
Yes
2400 TO272S-4.png
5554824255001
MAGx-101214-500L00 询问 500 W GaN on Silicon Transistor
1.2 – 1.4 GHz
50 500 16 72
Ceramic Surface Mount
询问 Yes
MAGx.png
5630890360001