射频功率晶体管 - 硅基氮化镓 (GaN on Si) - 脉冲

射频功率晶体管 - 硅基氮化镓 (GaN on Si) - 脉冲

MACOM公司以分立器件、模块和单元的形式提供广泛的脉冲线性射频功率晶体管产品,支持频率从DC到6 GHz。我们的大功率晶体管完美匹配民用航空、通讯、网络、雷达、工业、科研、以及医疗领域。我们的产品线借助于MACOM六十多年的技术传承,运用bipolar、MOSFET、以及现在的GaN技术,提供标准和定制的解决方案以满足客户最严苛的需求。MACOM公司的硅基氮化镓产品(可用作分立晶体管和集成放大器)采用0.5微米HEMT工艺,可以在宽带应用下,在功率、增益、增益平稳度、效率、健壮性方面展现出了卓越的射频性能。

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部件号 订货 描述 频率范围(GHz) 电源电压(V) PSAT (W) 增益(dB) 效率(%) 测试频率(GHz) 封装 θJ-C (C/W) 硬件手册 最高频率(MHz) 最低频率(MHz) 模型数据(Sparameters) 封装类别 ROHS 无铅 应用笔记 类型 特性 引线精加工 兼容部件 产品照片 Brightcove视频 ADS & SPICE模型信息
 
 
 
 
 
 
 
 
NPT25015 采购 Gallium Nitride 28V, 23W RF Power Transistor
DC - 3
28 23 14 2.5 SOIC8NE
6.3 NPT25015.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
23 W P3dB peak envelope power (PEP)
1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
100% RF tested
Thermally-enhanced industry standard package
High reliability gold metallization process
Subject to EAR99 Export Control
Lead-Free
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT35015D 采购 Gallium Nitride 28V, 18W RF Power Transistor
3 - 4
28 18 11 3.5 SOIC8NE
6.3 NDS-005 Rev 5 NPT35015.pdf
4000 3000 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
Thermally Enhanced Industry Standard Package
100% RF tested
Characterized for Operation up to 32V
1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
25W P3dB peak Envelope Power
18W P3dB CW Power
Subject to EAR99 Export Contyrol
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D 采购 Gallium Nitride 28V, 45W RF Power Transistor
DC - 3
28 45 13 2.5 SOIC8NE
4.3 NDS-010 Rev 4 NPT1004.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
2-Stage High Power MMIC Amplifier
RTH of 2.7°C/W Resulting in 20+ Years of Operation at Max Flange of 90°C at PSAT
Typical 50W Broadband Saturated Power Output Across 1.0-2.0GHz
Unmatched Output for Tuning Flexibility
Input Matched to 50 Ohms
Subject to EAR99 Export Control
NP00004A_SOIC-8NE_new_logo.jpg