CGHV14800
800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
The CGHV14800 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14800 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The package options are ceramic/metal flange (CGHV14800F) and pill package (CGHV14800P).
Product Specifications
- Part Number
- CGHV14800
- Description
- 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 800
- Gain(dB)
- 16.0
- Efficiency(%)
- 65
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 910 W Typical Output Power
- 14 dB Power Gain
- 70% Typical Drain Efficiency
- <0.3 dB Pulsed Amplitude Droop
- Internally input and output matched