GTVA101K4

High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz

The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 - 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.

Product Specifications

Part Number
GTVA101K4
Description
High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
Min Frequency(MHz)
960
Max Frequency(MHz)
1400
Peak Output Power(W)
1400
Gain(dB)
17.0
Efficiency(%)
68
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
GaN-on-SiC

Features

  • Input matched
  • Typical Pulsed CW performance; 960 – 1215 MHz; 50 V; single side; 128 μs pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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GTVA101K42EV-V1
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