PTVA047002EV-V1

High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz

The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTVA047002EV-V1
Description
High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz
Min Frequency(MHz)
470
Max Frequency(MHz)
806
Peak Output Power(W)
700
Gain(dB)
17.5
Efficiency(%)
29
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Bolt Down
Technology
LDMOS

Features

  • Input matched
  • Integrated ESD protection
  • Low thermal resistance
  • High gain
  • Thermally enhanced package
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 130 W average power under DVB-T signal condition
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)

Technical Resources

Datasheet


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PTVA047002EV-V1
LDMOS RF Transistor, 470?806MHz, 700W, i