射频功率晶体管 - 硅MOSFET

MOSFET

MACOM公司以分立器件的形式提供广泛的TMOS和DMOS射频功率MOSFET晶体管产品,支持频率从DC到1.0GHz。我们的高功率MOSFET晶体管完美匹配民用航空、通讯、网络、雷达、工业、科研、以及医疗领域。我们的全镀金制造工艺确保了产品的高性能和长期可靠性。我们的MOSFET晶体管旨在为用户严苛的应用提供可靠的解决方案。

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部件号 订货 Short Description Min Frequency (MHz) Max Frequency (MHz) Pout (W) Gain (dB) Efficiency (%) Pulse Width (µS) Duty Cycle (%) ROHS Package Model Data (Sparameters) ADS & SPICE Model Info Application Notes Benefits Bias Voltage (V) Brightcove Video Compatible Parts Content Data Sheet Package Outline Datasheet Device Firmware ESD EVM GUI Software EVM User Guides Features Lead Finish Lead-Free MSL Marking Outline Drawings Package Category Product Briefs Product Bulletins Product Image Qualification Reports Type
 
 
 
 
 
 
 
 
MRF176GU 采购 The RF MOSFET Line 200/150W, 500MHz, 50V
5 400 150 14 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF176GU.pdf
N-Channel Enhancement Mode Device
Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 7.0 pF Typ @ VDS = 50 V
Low Thermal Resistance
100% Ruggedness Tested at Rated Output Power
Yes
Ceramic Flange Mount
MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
TMOS
MRF151A 采购 MOSFET
5 175 150 13 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4001 - 300 Watt Class E Amplifier Using MRF151A
50 MRF151A.pdf
Enhanced Thermal Performance
Higher Power Dissipation
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%
Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability
Yes
Ceramic Flange Mount
MRF151A - Case P.JPG
TMOS
DU2880V 采购 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
30 175 80 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2880V.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
RF PT SI - DU2880V.JPG
DMOS
DU2860T 采购 RF Power MOSFET Transistor 60W, 2-175MHz, 28V
30 175 60 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2860T.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
RF PT- SI _DU2860T.JPG
DMOS
MRF175LU 采购 The RF MOSFET Line 100W, 400MHz, 28V
5 400 100 10 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF175LU.pdf
N-Channel Enhancement Mode Device
Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 20 pF Typ @ VDS = 28 V
Low Thermal Resistance
100% Rruggedness Tested at Rated Output Power
Yes
Ceramic Flange Mount
MRF175LU-CASE-333-04-STYLE-2.JPG
TMOS
MRF176GV 采购 The RF MOSFET Line 200/150W, 500MHz, 50V
5 225 200 17 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF176GU.pdf
N–Channel Enhancement Mode MOSFET
Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)
MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 7.0 pF Typ @ VDS = 50 V
Low Thermal Resistance
100% Ruggedness Tested at Rate Output Power
Yes
Ceramic Flange Mount
MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
TMOS
MRF140 采购 The RF MOSFET Line 30W, to 400MHz, 28V
5 150 150 15 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF140.pdf
N–Channel Enhancement Mode
IMD(d11) (150 W PEP): –60 dB (Typ.)
Superior High Order IMD
Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)
100%Test for Load Mismatch at all Phase with 30:1 VSWR
IMD(d3) (150 W PEP): –30 dB (Typ.)
Yes
Ceramic Flange Mount
MRF140 - Case 211-11 Style 2.JPG
TMOS
MRF175GU 采购 The RF MOSFET Line 200/150W, 500MHz, 28V
5 400 150 12 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF175GU.pdf
Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)
100% RuggednessTested at a Rated output Power
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Low Crss — 20 pF typ @ VDS = 28 V
Low Thermal Resistance
Yes
Ceramic Flange Mount
MRF175GU - Case 375-04 Style 2.JPG
TMOS
MRF148A 采购 Linear RF Power MOSFET 30W, to 175MHz, 50V
5 175 30 18 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF148A.pdf
Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)
100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR
Lower Reverse Transfer Capacitance (3.0 pF typ.)
Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40% (Typ.)
Yes
Flange Mount
MRF148A - Case 211-07, Style 2.JPG
TMOS
MRF173CQ 采购 The RF MOSFET Line 80W, 175MHz, 28V
5 175 80 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF173CQ.pdf
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability; Suited for Class A Operation
Low Noise Figure— 1.5 dB (Typ.) at 2.0 A, 150 MHz
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance
Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% Min. (60% Typ.)
Yes
Ceramic Flange Mount
MRF173CQ - Case 316-01 Style 2.JPG
TMOS
MRF141 采购 RF Power MOSFET 150W, to 175MHz, 28V
5 175 150 18 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF141.pdf
Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
Low Thermal Resistance
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Yes
Ceramic Flange Mount
MRF141- Case 211-11 Style 2.JPG
TMOS
MRF136Y 采购 The RF MOSFET Line 30W, to 400MHz, 28V
5 400 30 14 54 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF136Y.pdf
N–Channel Enhancement Mode
100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Small and Large Signal characterization
Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.)
Facilitates Manual Gain Control ALC and Modulation Techniques
Excellent Thermal Stability, Ideally Suited for Class A Operation
Space Saving Package for Push–:Pull Circuit Applications
Yes
Ceramic Flange Mount
MRF136Y - Case 319 B-02 Style 1.JPG
TMOS
MRF174 采购 The RF MOSFET Line 125W, 200MHz
5 200 125 9 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF174.pdf
N–Channel Enhancement Mode MOSFET
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability; ideally Suite for Class A Operations
Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)
Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz
Yes
Ceramic Flange Mount
MRF174- Case 211-02 Style 2.JPG
TMOS
MRF158 采购 The Broadband RF MOSFET Line 2W, 500MHz, 28V
5 500 2 16 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF158.pdf
N–Channel enhancement mode
Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR
Excellent Thermal Stability Ideally Suited for Class A Operation
Yes
Ceramic Flange Mount
MRF158 - Case 305-01 Style 2.JPG
TMOS
MRF173 采购 The RF MOSFET Line 80W, 175MHz, 28V
5 175 80 11 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF173.pdf
N–Channel Enhancement Mode MOSFET
Low Thermal Resistance
Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Excellent Thermal Stability, Suite for Class A Operation
Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz
Yes
Ceramic Flange Mount
MRF173- Case 211-11 Style 2.JPG
TMOS
MRF175GV 采购 The RF MOSFET Line 200/150W, 500MHz, 28V
5 225 200 14 65 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF175GU.pdf
N–Channel Enhancement Mode MOSFET
Low Crss — 20 pF typ @ VDS = 28 V
Low Thermal Resistance
100% Ruggedness Test at Rate Output Power
Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ
Yes
Ceramic Flange Mount
MRF175GU - MRF175GV Case 375-04 Style 2.JPG
TMOS
MRF177 采购 The RF MOSFET Line 100W, 400MHz, 28V
5 400 100 12 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF177.pdf
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability; Suited for Class A Operation
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Crss — 10 pF typ. @ VDS = 28 V
Low Thermal Resistance
Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
Yes
Ceramic Flange Mount
MRF177-CASE-744A-01-STYLE-2.JPG
TMOS
MRF134 采购 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
5 400 5 11 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF134.pdf
N–Channel enhancement mode
Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.
Smal land Large Signal Characterization
Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain
100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR
Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
Excellent Thermal Stability, Ideally Suited for Class A Operation
100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR
Yes
Ceramic Flange Mount
MRF134 - Case 211-07, Style 2.JPG
TMOS
MRF166W 采购 The RF MOSFET Line 40W, 500MHz, 28V
5 500 40 14 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF166W.pdf
N–Channel enhancement mode MOSFET
Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%
Push–Pull Configuration Reduces Even Numbered Harmonics
Low Crss — 4.0 pF @ VDS = 28 V
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Control, ALC and Modulation Techniques
Excellent Thermal Stability Ideally Suited for Class A Operation
Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%
Yes
Ceramic Flange Mount
MRF166W-CASE-412-01-STYLE-1.JPG
TMOS
MRF151 采购 RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 150 13 40 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF151.pdf
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%
Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability
Yes
Ceramic Flange Mount
MRF151.pdf
TMOS
MRF166C 采购 1 The RF MOSFET Line 20W, 500MHz, 28V
5 500 20 13.5 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Excellent Thermal Stability, Ideally Suited for Class A Operation
28 MRF166C.pdf
N–Channel Enhancement Mode MOSFET
Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%
Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001
100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR
Low Crss — 4.0 pF @ VDS = 28 V
Facilitate Manual Gain Control, ALC and Modulation Techniques
Yes
Ceramic Flange Mount
MRF166C - Case 319-07 Style 3.JPG
TMOS
MRF150 采购 RF Power MOSFET 150W, to 150MHz, 50V
5 150 150 17 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF150.pdf
Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.)
Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
100% Test for Load Mismatch at all Phase Angels
Yes
Ceramic Flange Mount
MRF150- Case 211-11 Style 2.JPG
TMOS
MRF275G 采购 The RF MOSFET Line 150W, 500MHz, 28V
5 500 150 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF275G.pdf
N-Channel Enhancement Mode Device
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF
Typical Data for Power Amplifiers in Industrial and Commercial Applications:
Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%
Simplified AVC, ALC and Modulation
Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%
Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)
Yes
Flange Mount
MRF275G Case 375-04 Style 2.JPG
TMOS
MRF137 采购 The RF MOSFET Line 30W, to 400MHz, 28V
5 400 30 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF137.pdf
Guaranteed 28 V, 150 MHz Performance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)
100% Test for Load Mistmatch at all Phase Angels with 30:1 VSWR
Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
Small and Large Signal Characterization
Excellent Thermal Stability, Ideally Suite for Class A Operation
Low Noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
Facilitates Manual Gain Control, ALC and Modulation Techniques
Yes
Ceramic Flange Mount
MRF137 - Case 211-07, Style 2.JPG
TMOS
MRF151G 采购 1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 300 14 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF151G.pdf
Guaranteed Performance at 175 MHz, 50 V:
Nitride Passivated Die for Enhanced Reliability
Ruggedness Tested at Rated Output Power
Low Thermal Resistance — 0.35°C/W
Efficiency — 50%
Gain — 14 dB (16 dB Typ)
Output Power — 300 W
Yes
Ceramic Flange Mount
MRF151G.jpg
TMOS
MRF160 采购 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
5 500 4 16 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF160.pdf
N–Channel enhancement mode MOSFET
Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Facilitates Manual Gain Control, aLS and Modulation Techniques
Excellent Thermal Stability, Ideally Suite for Class A Operation
Low Crss – 0.8 pF Typical at VDS = 28 V
Yes
Ceramic Flange Mount
MRF160 - Case 249-06 Style 3.JPG
TMOS
MRF157 采购 Linear RF Power MOSFET 600W, to 80MHz
5 80 600 21 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF157.pdf
Specified 50 volts, 30 MHz characteristics
Efficiency = 45% (typ.)
Power gain = 21 dB (typ.)
Output power = 600 watts
Yes
Ceramic Flange Mount
MRF157 - Case 368-03 Style 2.JPG
TMOS
MRF154 采购 Broadband RF Power MOSFET 600W, to 80MHz, 50V
5 80 600 17 45 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
50 MRF154.pdf
N–Channel enhancement mode MOSFET
Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)
Yes
Ceramic Flange Mount
MRF154 - Case 368-03 Style 2 HOG PAC.JPG
TMOS
MRF171A 采购 The RF MOSFET Line 45W, 150MHz, 28V
100 200 45 17 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF171A.pdf
N–Channel Enhancement Mode MOSFET
Excellent Thermal Stability Suited for Cass A Operation
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)
Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment:
Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)
Gold Top Metal
Low Crss – 8 pF @ VDS = 28 V
100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Facilitates Manual Gain Controll, ALC and Modulation Techniques
Yes
Flange Mount
MRF170A - Case 211-07, Style 2.JPG
TMOS
MRF275L 采购 The RF MOSFET Line 100W, 500MHz, 28V
5 500 100 8.8 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF275L.pdf
N-Channel Enhancement Mode Device
Low Thermal Resistance
100% Ruggedness Tested at Rated Output Power
Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)
Low Crss — 17 pF typ. @ VDS = 28 V
Yes
Ceramic Flange Mount
MRF275L-CASE-333-04-STYLE-2.JPG
TMOS
DU28120T 采购 RF Power MOSFET Transistor 120W, 2-175MHz, 28V
30 175 120 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU28120T.pdf
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
Yes
Ceramic Flange Mount
RF T SI - DU28120T.JPG
DMOS
MRF136 采购 The RF MOSFET Line 15W, to 400MHz, 28V
5 400 15 16 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 MRF136.pdf
N–Channel Enhancement Mode
Excellent Thermal Stability Suited for Cass A Operation
100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR
Small and Large Signal Characterization
Guaranteed 28 Volt, 150 MHz Performance - Output Power = 15 Watts Narrowband Gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
Facilities Manaul Gain Control, ALC and Modulation Techniques
Yes
Ceramic Flange Mount
MRF136 - Case 211-07, Style 2.JPG
TMOS
UF28100H 采购 RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF28100H.pdf
N-Channel Enhancement Mode Device
RoHS Compliant
Lower Noise Figure than Competitive Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF28100H.JPG
DMOS
DU2880U 采购 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
30 175 80 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Lower Noise Figure than Bipolar Devices
28 DU2880U.pdf
N-Channel Enhancement Mode Device
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
RF PT- SI _ DU2860U.JPG
DMOS
DU1215S 采购 RF Power MOSFET Transistor 15W, 2-175MHz, 12V
30 175 15 9.5 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
12 DU1215S.pdf
N-Channel enhancement mode device
Specifically designed for 12 volt applications
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT SI _DU1215S.JPG
DMOS
UF2820R 采购 RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
100 500 20 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2820R.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Competitive Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF2820R.JPG
DMOS
DU2810S 采购 RF Power MOSFET Transistor 10W, 2-175MHz, 28V
30 175 10 13 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2810S.pdf
N-Channel Enhancement Mode Device
Low Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT- SI _DU2810S.JPG
DMOS
DU2880T 采购 1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
30 175 80 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2880T.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
RF PT- SI DU2880T.JPG
DMOS
LF2805A 采购 RF Power MOSFET Transistor 5W, 500-1000MHz, 28V
500 1000 5 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 LF2805A.pdf
N-Channel Enhancement Mode Device
Low Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS structure
500 MHz to 1400 MHz
Broadband Linear Operation
Yes
Ceramic Flange Mount
LF2802A_LF2805A.JPG
DMOS
UF2815B 采购 1 RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
100 500 15 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2815B.pdf
N-Channel Enhancement Mode Device
Lower Capacitances for Broadband Operations
DMOS Structure
100 MHz to 500 MHz Operation
RoHS Compliant
Low Noise Floor
Common Source Configuration
Yes
Ceramic Flange Mount
UF2815B.JPG
DMOS
DU28120V 采购 RF Power MOSFET Transistor 120W, 2-175MHz, 28V
30 175 120 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU28120V.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT SI - DU28120V.JPG
DMOS
UF2805B 采购 1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 5 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2805B.pdf
N-Channel Enhancement Mode Device
100 MHz to 500 MHz Operation
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF2805B.JPG
DMOS
UF2840P 采购 RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
100 500 40 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2840P.pdf
N-Channel Enhancement Mode Device
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF2840P.JPG
DMOS
DU2805S 采购 RF Power MOSFET Transistor 5W, 2-175MHz, 28V
30 175 5 11 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2805S.pdf
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT- SI _ DU2805S.JPG
DMOS
DU2820S 采购 RF Power MOSFET Transistor 200W, 2-175MHz, 28V
30 175 20 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2820S.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT- SI DU2820S.JPG
DMOS
DU28200M 采购 RF Power MOSFET Transistor 200W, 2-175MHz, 28V
30 175 200 13 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU28200M.pdf
N-Channel Enhancement Mode Device
Lower Noise Figure than Bipolar Devices
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS structure
Yes
Ceramic Flange Mount
RF PT- SI _ DU28200M.JPG
DMOS
UF2810P 采购 RF Power MOSFET Transistor 10W, 100-500 MHz, 28V
100 500 10 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2810P.pdf
N-Channel enhancement mode device
100 MHz to 500 MHz operation
Lower noise floor
Common source configuration
Lower capacitances for broadband operation
DMOS structure
Yes
Ceramic Flange Mount
MACOM_general.png
DMOS
UF2840G 采购 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 40 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2840G.pdf
N-Channel Enhancement Mode Device
100 MHz to 500 MHz Operation
Lower Noise Floor
Lower Capacitances for Broadband Operation
DMOS Structure
Common Source Configuration
Yes
Ceramic Flange Mount
UF2840G.JPG
DMOS
UF28100M 采购 RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF28100M.pdf
N-Channel Enhancement Mode Device
RoHS Compliant
Lower Noise Figure than Competitive Devices
High Saturated Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF28100M.JPG
DMOS
UF2820P 采购 RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
100 500 20 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF2820P.pdf
N-Channel Enhancement Mode Device
Lower Noise Floor
Common Source Configuration
Lower Capacitances for Broadband Operation
DMOS Structure
Yes
Ceramic Flange Mount
UF2820P.JPG
DMOS
UF28100V 采购 RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF28100V.pdf
N-channel Enhancement Mode Device
High Saturated Output Power
Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices
DMOS Structure
Lower Noise Figure than Competitive Devices
Yes
Flange Mount
UF28100V.JPG
DMOS
UF28150J 采购 RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
100 500 150 8 55 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 UF28150J.pdf
DMOS Structure
Common Source Configuration
Lower Capacitance for Broadband Operation
Yes
Ceramic Flange Mount
UF28150J.JPG
DMOS
DU2840S 采购 RF Power MOSFET Transistor 40W, 2-175MHz, 28V
30 175 40 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2840S.pdf
N-Channel enhancement mode device
Lower noise figure than bipolar devices
High saturated output power
Lower capacitances for broadband operation
DMOS structure
Yes
CeramicFlange Mount
MACOM_general.png
DMOS
DU2860U 采购 RF Power MOSFET Transistor 60W, 2-175MHz, 28V
30 175 60 13 60 Flange Ceramic Pkg
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
28 DU2860U.pdf
N-Channel Enhancement Mode Device
High Saturate Output Power
Lower Capacitances for Broadband Operation
DMOS Structure
Lower Noise Figure than Bipolar Devices
Yes
Ceramic Flange Mount
RF PT- SI _ DU2860U.JPG
DMOS